The dopant contrast in SEM has now been studied for more than a decade, a clear explanation of it remains a matter for the future. Generally, p-type silicon appears brighter in the secondary electron (SE) emission than n-type
4) PEEM equipped with high-pass energy filter as a surface sensitive tool was used for characteriz...
Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope oper...
Secondary electron filtering in Scanning Electron Microscope (SEM) has been in use for over\na decad...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast ...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structu...
One of the ten most important challenges facing the semiconductor industry is to obtain an accurate ...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
This is the author accepted manuscript. The final version is available from Elsevier via http://dx.d...
4) PEEM equipped with high-pass energy filter as a surface sensitive tool was used for characteriz...
Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope oper...
Secondary electron filtering in Scanning Electron Microscope (SEM) has been in use for over\na decad...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
Secondary electron (SE) image contrast from p-type silicon has been studied using field-emission sca...
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast ...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structu...
One of the ten most important challenges facing the semiconductor industry is to obtain an accurate ...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
This is the author accepted manuscript. The final version is available from Elsevier via http://dx.d...
4) PEEM equipped with high-pass energy filter as a surface sensitive tool was used for characteriz...
Imaging of As- and B-doped silicon regions has been performed in a scanning electron microscope oper...
Secondary electron filtering in Scanning Electron Microscope (SEM) has been in use for over\na decad...
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