Add to ORKGDeep level transient spectroscopy (DLTS) and capacitance-voltage measurements have been made on AlGaAs/GaAs diode structures containing quantum wells (QW) prepared with graded and with step aluminium content as well as on structures without QWs.A new DLTS peak has been observed in the structures containing QWs, either with graded or with step structure. Mechanisms of electron transitions explaining the new results has been discussed
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-volta...
We report transient capacitancemeasurements on Al x Ga1−x As–GaAs–Al x Ga1 −x As (x∼0.35) double het...
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-le...
It is shown that DLTS on quantum wells using gold (Au) Schottky barrier diodes, combined with PL mea...
We studied the electrical properties of vertically-stacked double-layered InGaAs/InGaAsP quantum dot...
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep leve...
79 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.This thesis presents the resul...
Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs wel...
The b and offsets of heterostructures are very important parameters for the design of optoelectronic...
The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaA...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
Deep levels have been studied for many GaAs, Ga1-xAlxAs thin film structures (Schottky diodes, p+ n ...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0...
Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped po...
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-volta...
We report transient capacitancemeasurements on Al x Ga1−x As–GaAs–Al x Ga1 −x As (x∼0.35) double het...
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-le...
It is shown that DLTS on quantum wells using gold (Au) Schottky barrier diodes, combined with PL mea...
We studied the electrical properties of vertically-stacked double-layered InGaAs/InGaAsP quantum dot...
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep leve...
79 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1986.This thesis presents the resul...
Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs wel...
The b and offsets of heterostructures are very important parameters for the design of optoelectronic...
The features of current deep level transient spectroscopy (I-DLTS) spectra are investigated in AlGaA...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
Deep levels have been studied for many GaAs, Ga1-xAlxAs thin film structures (Schottky diodes, p+ n ...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The conduction-band offset Delta E-C has been determined for a molecular beam epitaxy grown GaAs/In0...
Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped po...
Energy levels of InAs/GaAs self-assembled quantum dot (QD) system were analyzed by capacitance-volta...
We report transient capacitancemeasurements on Al x Ga1−x As–GaAs–Al x Ga1 −x As (x∼0.35) double het...
The electrical properties of the CdTe/ZnTe quantum dot system have been analyzed to identify deep-le...