© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.In this work, we have fabricated and studied p-type picene thin-film transistors. Although the devices exhibited good electrical performance with high field-effect mobility (up to 1.3 cm 2 /V·s) and on/off ratios above 10 5 , the output electric characteristics of the devices exhibited a Negative Differential Resistance for higher drain-source voltage. Finally, a po...
none4siIn this paper, we clarify the physical mechanism for the phenomenon of negative output differ...
Our research group has been studying the electrical properties of the chalcogenide-based memristive ...
International audienceP and N type polycrystalline silicon has been applied in thin film transistors...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Abstract Negative differential resistance (NDR) is a phenomenon in which an increase in voltage acro...
The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-...
Electroformed metal-insulator-metal structures showing negative differential resistance, electron em...
In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) i...
Negative Differential Resistance (NDR) behaviour is demonstrated in the output characteristics (Ids-...
Current‐controlled negative differential resistance has significant potential as a fundamental build...
none4siIn this paper, we clarify the physical mechanism for the phenomenon of negative output differ...
Contact effects have been investigated in fully printed p-channel organic thin film transistors with...
Contact effects have been investigated in fully printed p-channel organic thin film transistors with...
Contact effects have been investigated in fully printed p-channel organic thin film transistors with...
none4siIn this paper, we clarify the physical mechanism for the phenomenon of negative output differ...
Our research group has been studying the electrical properties of the chalcogenide-based memristive ...
International audienceP and N type polycrystalline silicon has been applied in thin film transistors...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for a...
Abstract Negative differential resistance (NDR) is a phenomenon in which an increase in voltage acro...
The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-...
Electroformed metal-insulator-metal structures showing negative differential resistance, electron em...
In this paper we demonstrate experimentally and discuss the negative differential resistance (NDR) i...
Negative Differential Resistance (NDR) behaviour is demonstrated in the output characteristics (Ids-...
Current‐controlled negative differential resistance has significant potential as a fundamental build...
none4siIn this paper, we clarify the physical mechanism for the phenomenon of negative output differ...
Contact effects have been investigated in fully printed p-channel organic thin film transistors with...
Contact effects have been investigated in fully printed p-channel organic thin film transistors with...
Contact effects have been investigated in fully printed p-channel organic thin film transistors with...
none4siIn this paper, we clarify the physical mechanism for the phenomenon of negative output differ...
Our research group has been studying the electrical properties of the chalcogenide-based memristive ...
International audienceP and N type polycrystalline silicon has been applied in thin film transistors...