The topic of work is study of semiconductor structure with defined doped areas by SEM with slow electrons, under ultra-high vacuum and standard vacuum conditions.The aim is to find optimal conditions of imaging doped areas and find out the dependence between contrast and doping density
The aim of the dissertation is study of multi-channel spectroscopy of electrons (secondary, both ela...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
The topic of the work is study of one technological layer of semiconductor structure with delimited ...
The incorporation of impurity (i.e. dopant) atoms in semiconducting materials is fundamental to all ...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast ...
One of the ten most important challenges facing the semiconductor industry is to obtain an accurate ...
This master's thesis deals with study of the injected charge contrast mechanism of doped semiconduct...
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structu...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
Electron microscopy techniques have great potential for dopant profiling because of their high spati...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
The aim of the dissertation is study of multi-channel spectroscopy of electrons (secondary, both ela...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
The topic of the work is study of one technological layer of semiconductor structure with delimited ...
The incorporation of impurity (i.e. dopant) atoms in semiconducting materials is fundamental to all ...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
Scanning electron microscopy is widely used for imaging of semiconductor structures. Image contrast ...
One of the ten most important challenges facing the semiconductor industry is to obtain an accurate ...
This master's thesis deals with study of the injected charge contrast mechanism of doped semiconduct...
A technique for the direct imaging of 2-dimensional doping profiles in layered semiconductor structu...
Direct observation of doped patterns in semiconductor, usually on cleavedsections through multilayer...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
Electron microscopy techniques have great potential for dopant profiling because of their high spati...
Contrast between differently doped areas in semiconductors can be observed in the secondary electron...
The growing use of secondary electron imaging in the scanning electron microscope (SEM) to map dopan...
The aim of the dissertation is study of multi-channel spectroscopy of electrons (secondary, both ela...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a use...
Two-dimensional dopant mapping using secondary electrons in a scanning electron microscope is a usef...
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