The technology of semiconductor devices microfabrication becomes presently the main consumer of imaging methods by means of low voltage scanning electron microscopy (LVSEM). The main tasks are the inspection after lithograophic masking and etching processes, including measurements of critical linewidth dimension (CD), and the imaging of three dimensional high aspect ratio structures
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Recent developments in applications of the scanning very low energy electron microscopy in selected ...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...
This thesis concentrates on the methodology of semiconductor samples preparation for low voltage sca...
Low voltage imaging, X-ray microanalysis and X-ray mapping has become very important for the investi...
The evolution of integrated circuit dimensions into the submicron region for the Very Large Scale In...
Study of doped silicon structures using photoemission electron microscopy and low-voltage scanning e...
Scanning electron microscopy (SEM) represents a powerful tool for studying spatial structures in con...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
Detailed investigating into the effects of spherical and chromatic aberrations, diffraction and the ...
The scanning electron microscope (SEM) has unique capabilities for high resolution examination of su...
The aim of this thesis is to demonstrate the advantages of the scanning low energy electron microsco...
Many techniques for high-resolution surface analysis of semiconductors are known, such as optical-, ...
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Functional details of semiconductor structures keep decreasing in size. Among the structure elements...
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Recent developments in applications of the scanning very low energy electron microscopy in selected ...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...
This thesis concentrates on the methodology of semiconductor samples preparation for low voltage sca...
Low voltage imaging, X-ray microanalysis and X-ray mapping has become very important for the investi...
The evolution of integrated circuit dimensions into the submicron region for the Very Large Scale In...
Study of doped silicon structures using photoemission electron microscopy and low-voltage scanning e...
Scanning electron microscopy (SEM) represents a powerful tool for studying spatial structures in con...
There is an urgent need for fast, non-destructive and quantitative two-dimensional dopant profiling ...
Detailed investigating into the effects of spherical and chromatic aberrations, diffraction and the ...
The scanning electron microscope (SEM) has unique capabilities for high resolution examination of su...
The aim of this thesis is to demonstrate the advantages of the scanning low energy electron microsco...
Many techniques for high-resolution surface analysis of semiconductors are known, such as optical-, ...
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Functional details of semiconductor structures keep decreasing in size. Among the structure elements...
The use of lower energy (0.5 to 10 keV) electron beams in the scanning electron microscope (LVSEM) p...
Recent developments in applications of the scanning very low energy electron microscopy in selected ...
Current methodology of imaging in the scanning electron microscopy is based on the detection of sign...