In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.Peer Reviewe
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
In the present paper we analyze that DC temperature measurements of the silicon surface can be used ...
In the present paper we analyze that DC temperature measurements of the silicon surface can be used...
This work aims at showing a new approach for determining the efficiency of linear class A RF power a...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper introduces a novel on-chip measurement technique for the determination of the central fre...
This letter introduces a novel on-chip measurement technique for the determination of the central fr...
This letter introduces a novel on-chip measurement technique for the determination of the central fr...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation ...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
In the present paper we analyze that DC temperature measurements of the silicon surface can be used ...
In the present paper we analyze that DC temperature measurements of the silicon surface can be used...
This work aims at showing a new approach for determining the efficiency of linear class A RF power a...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper reports on the design solutions and the different measurements we have done in order to c...
This paper introduces a novel on-chip measurement technique for the determination of the central fre...
This letter introduces a novel on-chip measurement technique for the determination of the central fr...
This letter introduces a novel on-chip measurement technique for the determination of the central fr...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
One of the threats to nanometric CMOS analog circuit reliability is circuit performance degradation ...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...
The power dissipated by the devices of an integrated circuit can be considered a signature of the ci...