We introduce a physical model to describe the influence of a perpendicular electric field on circular polarization (CP) and valley polarization (VP) in bilayer transition metal dichalcogenides. Our results uncover that electric-field-dependent CP and VP are quite distinct from each other. The dependence of CP on the electric field harbors a W pattern and possesses the minimum when the potential energy difference between the two layers is equal to the strength of spin-orbit coupling. Such dependence of CP stems from the modulation of energy cost for interlayer hopping and spin-dependent layer polarization. In contrast, VP is strictly absent in primitive bilayers and increases monotonically with increasing strength of electric field, resultin...
We study the polarization dependence of optical absorption for a modified Haldane model, which exhib...
In 2004, A. Geim and K. Novoselov realized the first isolation of a one-atom-thick material, graphen...
Symposium O - Emerging Non-Graphene 2D Materials: no. O4.03The recent emergence of two-dimensional t...
We introduce a physical model to describe the influence of a perpendicular electric field on circula...
Session J51 DMP: Focus Session: Beyond Graphene Devices: Function, Fabrication, and Characterizati...
In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees...
| openaire: EC/H2020/820423/EU//S2QUIPValley-contrasting Berry curvature and orbital magnetic moment...
The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to ...
A two-dimensional honeycomb lattice harbours a pair of inequivalent valleys in the k-space electroni...
A trend in future electronics is to utilize internal degrees of freedom of electron, in addition to ...
Atomically thin layers of group VI transition metal dichalcogenides (TMDCs) have been recognized as ...
Session S51: Invited Session: The Valley Hall Effect in van der Waals Materials: no. S51.4In two-dim...
In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inve...
In single-layer WSe2, a paradigmatic semiconducting transition metal dichalcogenide, a circularly po...
The current valleytronics research is based on the paradigm of time-reversal-connected valleys in tw...
We study the polarization dependence of optical absorption for a modified Haldane model, which exhib...
In 2004, A. Geim and K. Novoselov realized the first isolation of a one-atom-thick material, graphen...
Symposium O - Emerging Non-Graphene 2D Materials: no. O4.03The recent emergence of two-dimensional t...
We introduce a physical model to describe the influence of a perpendicular electric field on circula...
Session J51 DMP: Focus Session: Beyond Graphene Devices: Function, Fabrication, and Characterizati...
In monolayer group-VI transition metal dichalcogenides, charge carriers have spin and valley degrees...
| openaire: EC/H2020/820423/EU//S2QUIPValley-contrasting Berry curvature and orbital magnetic moment...
The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to ...
A two-dimensional honeycomb lattice harbours a pair of inequivalent valleys in the k-space electroni...
A trend in future electronics is to utilize internal degrees of freedom of electron, in addition to ...
Atomically thin layers of group VI transition metal dichalcogenides (TMDCs) have been recognized as ...
Session S51: Invited Session: The Valley Hall Effect in van der Waals Materials: no. S51.4In two-dim...
In this Letter, a tunable valley polarization is investigated for honeycomb systems with broken inve...
In single-layer WSe2, a paradigmatic semiconducting transition metal dichalcogenide, a circularly po...
The current valleytronics research is based on the paradigm of time-reversal-connected valleys in tw...
We study the polarization dependence of optical absorption for a modified Haldane model, which exhib...
In 2004, A. Geim and K. Novoselov realized the first isolation of a one-atom-thick material, graphen...
Symposium O - Emerging Non-Graphene 2D Materials: no. O4.03The recent emergence of two-dimensional t...