The investigation of mechanical properties of atomic layer deposition HfO2 films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO2. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163-165 GPa and 8.3-9.7 GPa as a function of deposition temperature. The annealing of HfO2 caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. The structural change also caused increase in the ...
The deposition and characterization of HfO2 films for potential application as a high-k gate dielect...
[[abstract]]Varying thicknesses of the HfO2 films prepared by atomic layer deposition (ALD) were com...
Structural, optical, and mechanical properties of Al2O3, SiO2, and HfO2 materials prepared by plasma...
The investigation of mechanical properties of atomic layer deposition HfO2 films is important for im...
The mechanical properties of sputter-deposited HfO₂ and HfₓSi₁ˍₓO₂films were studied as a function o...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
The aim of this work is to determine the influence of medium frequency magnetron sputtering powers o...
Hysteresis-free hafnium oxide films were fabricated by atomic layer deposition at 90 degrees C witho...
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it usefu...
The effect of deposition temperature and post deposition annealing (PDA) on the electrical propertie...
Hafnium oxide, or hafnia, is a high temperature refractory material with good electrical, chemical, ...
Hafnium oxide, or hafnia, is a high temperature refractory material with good electrical, chemical, ...
181 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.The excellent overall wear an...
Detailed transmission electron microscopy characterization of Hf02 films deposited on Si(1 0 0) usin...
The deposition and characterization of HfO2 films for potential application as a high-k gate dielect...
[[abstract]]Varying thicknesses of the HfO2 films prepared by atomic layer deposition (ALD) were com...
Structural, optical, and mechanical properties of Al2O3, SiO2, and HfO2 materials prepared by plasma...
The investigation of mechanical properties of atomic layer deposition HfO2 films is important for im...
The mechanical properties of sputter-deposited HfO₂ and HfₓSi₁ˍₓO₂films were studied as a function o...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
Hafnium oxide (HfO2) is technologically an important material, which exhibits a unique set of proper...
The aim of this work is to determine the influence of medium frequency magnetron sputtering powers o...
Hysteresis-free hafnium oxide films were fabricated by atomic layer deposition at 90 degrees C witho...
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it usefu...
The effect of deposition temperature and post deposition annealing (PDA) on the electrical propertie...
Hafnium oxide, or hafnia, is a high temperature refractory material with good electrical, chemical, ...
Hafnium oxide, or hafnia, is a high temperature refractory material with good electrical, chemical, ...
181 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.The excellent overall wear an...
Detailed transmission electron microscopy characterization of Hf02 films deposited on Si(1 0 0) usin...
The deposition and characterization of HfO2 films for potential application as a high-k gate dielect...
[[abstract]]Varying thicknesses of the HfO2 films prepared by atomic layer deposition (ALD) were com...
Structural, optical, and mechanical properties of Al2O3, SiO2, and HfO2 materials prepared by plasma...