Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm−2 at 35 K and 100 K in a unique experimental setup. Positron annihilation measurements show a defect lifetime component of 272±4 ps at 35 K in in situ positron lifetime measurements after irradiation at 100 K. This is identified as the positron lifetime in a germanium monovacancy. Annealing experiments in the temperature interval 35–300 K reveal two annealing stages. The first at 100 K is tentatively associated with the annealing of the Frenkel pair, the second at 200 K with the annealing of the monovacancy. Above 200 K it is observed that mobile neutral monovacancies form divacancies, with a positron lifetime of 315 ps.Peer reviewe
The recent interest in germanium as an alternative channel material for PMOS has revealed major diff...
Electrical (and sometimes also mechanical) properties of a semiconductor are greatly influenced by v...
Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−...
Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm−2 at 35 ...
We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation,...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
In the present article we employ positron annihilation lifetime spectroscopy and secondary ion mass ...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
P-type germanium single crystals (8 X 1014 Ga/cm3 and 6 X 1015 Ga/cm3) were irradiated with 1.1 MeV ...
An investigatiori of the annealing of the radioinduced carrier concentration change in Sb-doped Ge i...
P-type germanium single crystals (8 x 10/sup 14/Ga/cm/sup 3/ and 6 x l0/ sup 1 Ga/cm/sup 3) were irr...
Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by posi...
N-type germanium (4.X 1014 Sb/cm3) has been irradiated with 1.1 MeV electrons at SOK. The defects p...
Changes in the electrical conductivity and Hall coefficient of germanium samples, irradiated with 4....
N-type lightly doped germanium has been irradiated at room temperature with different particles: sw...
The recent interest in germanium as an alternative channel material for PMOS has revealed major diff...
Electrical (and sometimes also mechanical) properties of a semiconductor are greatly influenced by v...
Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−...
Weakly n-type doped germanium has been irradiated with protons up to a fluence of 3×1014 cm−2 at 35 ...
We have studied the annealing of vacancy defects in neutron-irradiated germanium. After irradiation,...
Positron annihilation spectroscopy was used to study defects created during the ion implantation and...
In the present article we employ positron annihilation lifetime spectroscopy and secondary ion mass ...
Electrical properties of semiconductor materials are greatly influenced by point defects such as vac...
P-type germanium single crystals (8 X 1014 Ga/cm3 and 6 X 1015 Ga/cm3) were irradiated with 1.1 MeV ...
An investigatiori of the annealing of the radioinduced carrier concentration change in Sb-doped Ge i...
P-type germanium single crystals (8 x 10/sup 14/Ga/cm/sup 3/ and 6 x l0/ sup 1 Ga/cm/sup 3) were irr...
Undoped GaSb was irradiated by 2.6 MeV protons. The irradiation-induced defects were studied by posi...
N-type germanium (4.X 1014 Sb/cm3) has been irradiated with 1.1 MeV electrons at SOK. The defects p...
Changes in the electrical conductivity and Hall coefficient of germanium samples, irradiated with 4....
N-type lightly doped germanium has been irradiated at room temperature with different particles: sw...
The recent interest in germanium as an alternative channel material for PMOS has revealed major diff...
Electrical (and sometimes also mechanical) properties of a semiconductor are greatly influenced by v...
Thermal evolution of vacancy complexes was studied in P-doped ([P]=1018 cm−3) proton irradiated Si1−...