Statistics of electron tunneling in normal tunnel junctions is studied analytically and numerically taking into account circuit (environment) effects. Full counting statistics, as well as full statistics of voltage and phase have been found for arbitrary times of observation. The theoretical analysis was based on the classical master equation, whereas the numerical simulations employed standard Monte-Carlo methods.Peer reviewe
In this thesis, electron transport through single tunnel junction embedded in a dissipative environm...
We propose a scheme of measuring the non-Gaussian character of noise by a hysteretic Josephson junct...
We consider a voltage-biased normal metal-insulator-superconductor (NIS) tunnel junction, connected ...
Statistics of electron tunneling in normal tunnel junctions is studied analytically and numerically ...
We employ a single-charge counting technique to measure the full counting statistics of Andreev even...
We have investigated the asymptotic behavior of normal tunnel junctions at voltages where even the b...
We provide a direct proof of two-electron Andreev transitions in a superconductor–normal-metal tunne...
We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with o...
ABSTRACT: This paper applies statistical methods to analyze the large, noisy data sets produced in m...
This paper applies statistical methods to analyze the large, noisy data sets produced in measurement...
We show that the effect of a high-temperature environment in current transport through a normal meta...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-de...
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is bas...
We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal ...
The authors investigate a wafer scale tunnel junction fabrication method, where a plasmaetched via t...
In this thesis, electron transport through single tunnel junction embedded in a dissipative environm...
We propose a scheme of measuring the non-Gaussian character of noise by a hysteretic Josephson junct...
We consider a voltage-biased normal metal-insulator-superconductor (NIS) tunnel junction, connected ...
Statistics of electron tunneling in normal tunnel junctions is studied analytically and numerically ...
We employ a single-charge counting technique to measure the full counting statistics of Andreev even...
We have investigated the asymptotic behavior of normal tunnel junctions at voltages where even the b...
We provide a direct proof of two-electron Andreev transitions in a superconductor–normal-metal tunne...
We have measured individual tunneling events and Coulomb step shapes in single-electron boxes with o...
ABSTRACT: This paper applies statistical methods to analyze the large, noisy data sets produced in m...
This paper applies statistical methods to analyze the large, noisy data sets produced in measurement...
We show that the effect of a high-temperature environment in current transport through a normal meta...
The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-de...
We present two approaches for studying the uniformity of a tunnel barrier. The first approach is bas...
We have investigated the static, charge-trapping properties of a hybrid superconductor–normal metal ...
The authors investigate a wafer scale tunnel junction fabrication method, where a plasmaetched via t...
In this thesis, electron transport through single tunnel junction embedded in a dissipative environm...
We propose a scheme of measuring the non-Gaussian character of noise by a hysteretic Josephson junct...
We consider a voltage-biased normal metal-insulator-superconductor (NIS) tunnel junction, connected ...