Add to ORKGElectro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs. The lasers exhibit high optical recombination efficiency, low threshold current and capability to operate at elevated temperature
Up to now, for the telecom applications, the optoelectronic components are mainly used in the transm...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
Experimental investigation on semiconductor lasers with thin strained InAs layers embedded in GaAs m...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance...
A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limit...
We study the electroluminescence of laser diodes GaAs/(Ga, Al)As. The I.R. band, located near 1 eV a...
SIGLEINIST T 75791 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc
The paper presents a review of experimental investigations of various semiconductor materials used f...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
In spite of the almost ideal variation of the radiative current of 1.3 mu m GaAsSb/GaAs-based lasers...
The temperature behaviour of semiconductor lasers has a distinct influence on their application to p...
The demand for bandwidth capacity is increasing exponentially due to the spread of high-speed intern...
Up to now, for the telecom applications, the optoelectronic components are mainly used in the transm...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
Experimental investigation on semiconductor lasers with thin strained InAs layers embedded in GaAs m...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance...
A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limit...
We study the electroluminescence of laser diodes GaAs/(Ga, Al)As. The I.R. band, located near 1 eV a...
SIGLEINIST T 75791 / INIST-CNRS - Institut de l'Information Scientifique et TechniqueFRFranc
The paper presents a review of experimental investigations of various semiconductor materials used f...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
In spite of the almost ideal variation of the radiative current of 1.3 mu m GaAsSb/GaAs-based lasers...
The temperature behaviour of semiconductor lasers has a distinct influence on their application to p...
The demand for bandwidth capacity is increasing exponentially due to the spread of high-speed intern...
Up to now, for the telecom applications, the optoelectronic components are mainly used in the transm...
Measurements of the threshold current, Ith as a function of temperature, T were performed on 1.3 μm ...
NOTE: Text or symbols not renderable in plain ASCII are indicated by [...]. Abstract is included in ...