Add to ORKGContribution presents the electroluminescence, photoabsorption and polarization properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperature (above 25.sup.o./sup.C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperature operation rang
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
In the work reported in this thesis we have used hydrostatic pressure to investigate the band struct...
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
Experimental investigation on semiconductor lasers with thin strained InAs layers embedded in GaAs m...
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance...
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be...
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be...
The temperature dependence of the radiative and nonradiative components of the threshold current den...
We study the electroluminescence of laser diodes GaAs/(Ga, Al)As. The I.R. band, located near 1 eV a...
A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limit...
We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semicond...
International audienceThis paper presents the temperature dependent characteristics of a semiconduct...
International audienceThe electroluminescence of GaInNAs/GaAs quantum well light-emitting diodes is ...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
In the work reported in this thesis we have used hydrostatic pressure to investigate the band struct...
Electro-optical characterisation of semiconductor lasers with very thin strained InAs layers in GaAs...
Contribution presents the electroluminescence, photoabsorption and polarization properties of semico...
Experimental investigation on semiconductor lasers with thin strained InAs layers embedded in GaAs m...
The dependence of the electroluminescence spectra on the number of ë-InAs layers and on the distance...
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be...
In the present paper we demonstrate that wide-range wavelength tuning of semiconductor lasers can be...
The temperature dependence of the radiative and nonradiative components of the threshold current den...
We study the electroluminescence of laser diodes GaAs/(Ga, Al)As. The I.R. band, located near 1 eV a...
A new type of GaAs laser is based on the electron-hole plasma in a current filament and is not limit...
We have fabricated a quantum dot (QD) structure for long-wavelength temperature-insensitive semicond...
International audienceThis paper presents the temperature dependent characteristics of a semiconduct...
International audienceThe electroluminescence of GaInNAs/GaAs quantum well light-emitting diodes is ...
The subjects of this thesis can be divided into two main categories: III-V semiconductor lasers and ...
A systematic investigation of the temperature characteristics of quantum dot lasers emitting at 1.3 ...
In the work reported in this thesis we have used hydrostatic pressure to investigate the band struct...