This paper reports a novel solid-mounted flexible film bulk acoustic resonator (FBAR) directly on polymer substrate with the merits of flexibility and no need for back etching process. (0002) oriented ZnO films deposited by sputtering, and aluminum and gold as the electrodes were used to fabricate the FBARs. Results show that the devices with aluminum electrodes have a resonant frequency at 1.2 GHz with an effective electromechanical coupling coefficient of ∼ 4.7%, a filter-like architecture improved the quality factor of FBAR from 19.6 to 164.2, and the devices remained working after bending at a large angle for hundreds of times
[[abstract]]This study employs RF magnetron sputter technique to deposit high C-axis preferred orien...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
A piezoelectric thin film sandwiched between two metal electrodes is basic structure for high freque...
This paper reports a novel solid-mounted flexible film bulk acoustic resonator (FBAR) directly on po...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
ABSTRACT: This paper investigates the issues on acoustic energy reflection of flexible film bulk aco...
A piezoelectric thin film sandwiched between two metal electrodes is basic structure for high freque...
Sensing systems are becoming less and less invasive. In this context, flexible materials offer new o...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
Traditional radio frequency filters cannot meet the demands of miniaturization, high frequency opera...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
[[abstract]]This study employs RF magnetron sputter technique to deposit high C-axis preferred orien...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
A piezoelectric thin film sandwiched between two metal electrodes is basic structure for high freque...
This paper reports a novel solid-mounted flexible film bulk acoustic resonator (FBAR) directly on po...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
The film bulk acoustic resonator (FBAR) is a widely-used MEMS device which can be used as a filter, ...
ABSTRACT: This paper investigates the issues on acoustic energy reflection of flexible film bulk aco...
A piezoelectric thin film sandwiched between two metal electrodes is basic structure for high freque...
Sensing systems are becoming less and less invasive. In this context, flexible materials offer new o...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
Traditional radio frequency filters cannot meet the demands of miniaturization, high frequency opera...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
[[abstract]]This study employs RF magnetron sputter technique to deposit high C-axis preferred orien...
Film bulk acoustic resonators (FBAR) are promising candidates to replace surface acoustic wave devic...
A piezoelectric thin film sandwiched between two metal electrodes is basic structure for high freque...