The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress

In this paper, we investigated analytically the frequency equations for shear horizontal wave propagation in a piezoelectric half space covered by a semiconductor film with initial stress effect. The semiconducting layer is influenced by initial stress and the interface between the piezoelectric substrate and the semiconductor layer. The governing equations of the mechanical displacement and electrical potential function under the effect of initial stress are obtained by solving the coupled electromechanical field equations of the piezoelectric half-space and the semiconductor film. Next, the numerical examples are presented to illustrate the influence of initial stress and electromagnetic boundary conditions for the different values of the film thickness and wave number. Furthermore, we studied in more details the effect of initial stress on the frequency equation for piezoelectric Barium Titanate (BaTiO3) and semiconductor silicon. The obtained results provide a predictable and theoretical basis for applications of piezoelectric and semiconductor composites to acoustic wave devices