This contribution addresses the stability of Cz-Si solar cells subsequent to the so called Regeneration process which virtually eliminates the losses due to the well known boron-oxygen related defect. The stability of the regenerated state is vital for the industrial application of the Regeneration process. As recent experiments have shown, at least one sample was instable after the completed Degradation-Regeneration cycle at elevated temperatures. However, this instability was not found for other samples investigated. Furthermore, different possible interpretations of this instability are discussed
Boron-oxygen related defects are a serious problem limiting the efficiency of solar cells based on b...
Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the minor...
Boron and oxygen contamination in Czochralski (Cz) grown silicon leads in the short term to a degrad...
Boron-oxygen related light induced degradation (BO-LID) may be eliminated by applying a regeneration...
Light-induced degradation in boron-doped p-type Czochralski silicon is caused by a boron-oxygen comp...
Boron-oxygen related defects formed under working conditions of a c-Si solar cell can be a showstopp...
Light-induced degradation (LID) in boron-doped p-type Czochralski (Cz) silicon is caused by a boron–...
The present work aims at the analysis and technological reduction of the metastable defect responsib...
Boron-oxygen related recombination active defects typically limit solar cell efficiency in boron-dop...
Boron and oxygen contamination in Czochralski-grown (Q) silicon leads to a degradation of the minori...
The reduction of the lifetime degradation losses in Cz-Si solar cells offers a potential for a signi...
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light ...
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light ...
Lifetime degradation in Cz-grown silicon due to the formation of recombination active complexes cons...
As new solar cell architectures are developed with superior surface passivation, the boron-oxygen de...
Boron-oxygen related defects are a serious problem limiting the efficiency of solar cells based on b...
Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the minor...
Boron and oxygen contamination in Czochralski (Cz) grown silicon leads in the short term to a degrad...
Boron-oxygen related light induced degradation (BO-LID) may be eliminated by applying a regeneration...
Light-induced degradation in boron-doped p-type Czochralski silicon is caused by a boron-oxygen comp...
Boron-oxygen related defects formed under working conditions of a c-Si solar cell can be a showstopp...
Light-induced degradation (LID) in boron-doped p-type Czochralski (Cz) silicon is caused by a boron–...
The present work aims at the analysis and technological reduction of the metastable defect responsib...
Boron-oxygen related recombination active defects typically limit solar cell efficiency in boron-dop...
Boron and oxygen contamination in Czochralski-grown (Q) silicon leads to a degradation of the minori...
The reduction of the lifetime degradation losses in Cz-Si solar cells offers a potential for a signi...
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light ...
Carrier lifetime degradation in crystalline silicon solar cells under illumination with white light ...
Lifetime degradation in Cz-grown silicon due to the formation of recombination active complexes cons...
As new solar cell architectures are developed with superior surface passivation, the boron-oxygen de...
Boron-oxygen related defects are a serious problem limiting the efficiency of solar cells based on b...
Light-induced degradation (LID) due to boron-oxygen complex formation seriously diminishes the minor...
Boron and oxygen contamination in Czochralski (Cz) grown silicon leads in the short term to a degrad...