Light and elevated temperature induced degradation (LeTID) kinetics in float-zone silicon are investigated by varying the initial sample state, composed of different base material, base doping, SiN x :H films, and subsequent firing, and/or annealing steps. The approach of deliberately changing the initial sample state is shown to allow for specific studies of influences of LeTID kinetics. Bulk- and surface-related degradations are examined separately and the influence on the kinetics of bulk- and surface-related degradation is illustrated by a four-state and three-state model, respectively. In case of bulk-related degradation, an increase in defect density because of the firing step is shown, whereas the annealing step has an inverse effect...
Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effec...
Understanding the origins of the phenomena that limit the minority carrier lifetime in float-zone-gr...
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently i...
It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bul...
This paper discusses degradation phenomena in crystalline silicon. We present new investigations of ...
This work investigates the stability of lifetime samples made of monocrystalline silicon at elevated...
The use of different silicon nitride deposition tools is found to change the degree of light induced...
Light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon can reduce t...
In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon n...
Light- and elevated temperature-induced degradation in multicrystalline silicon can reduce the effic...
Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is...
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H o...
The degradation kinetics of multicrystalline silicon solar cells and wafers at elevated temperature ...
In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affect...
The influence of emitter layers on LeTID kinetics in multicrystalline silicon is analysed in this wo...
Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effec...
Understanding the origins of the phenomena that limit the minority carrier lifetime in float-zone-gr...
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently i...
It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bul...
This paper discusses degradation phenomena in crystalline silicon. We present new investigations of ...
This work investigates the stability of lifetime samples made of monocrystalline silicon at elevated...
The use of different silicon nitride deposition tools is found to change the degree of light induced...
Light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon can reduce t...
In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon n...
Light- and elevated temperature-induced degradation in multicrystalline silicon can reduce the effic...
Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is...
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H o...
The degradation kinetics of multicrystalline silicon solar cells and wafers at elevated temperature ...
In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affect...
The influence of emitter layers on LeTID kinetics in multicrystalline silicon is analysed in this wo...
Significant bulk-related degradation (BRD) is followed by surface-related degradation (SRD) of effec...
Understanding the origins of the phenomena that limit the minority carrier lifetime in float-zone-gr...
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently i...