Further investigations on the avoidance of boron-oxygen related degradation by means of regeneration

Boron and oxygen contamination in Czochralski (Cz) grown silicon leads in the short term to a degradation of the charge carrier lifetime due to the formation of recombination active complexes. For longer times these harmful complexes may be neutralized by a regeneration called reaction. Supported by elevated temperatures, a conversion of the recombination active species into an inactive species is induced by the presence of charge carriers injected by light or bias voltages. In this contribution, the influence of light intensity and bias voltages is discussed