In this work we examine the effectiveness of hydrogen passivation at grain boundaries as a function of defect type and microstructure in multicrystalline silicon. We analyze a specially prepared solar cell with alternating mm-wide bare and SiNx-coated stripes using laser beam-induced current (LBIC), electron backscatter diffraction (EBSD), synchrotron-based X-ray fluorescence microscopy (μ-XRF), and defect etching to correlate pre- and post-hydrogenation recombination activity with grain boundary character, density of iron-silicide nanoprecipitates, and dislocations. This study reveals that the microstructure of boundaries that passivate well and those that do not differ mostly in the character of the dislocations along the grain boundary, ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
Influence and passivation of extended crystallographic defects are investigated in large grained pol...
The impact of hydrogen passivation by means of ion implantation has been studied. The surface recomb...
We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure...
Two methods of hydrogen bulk passivation in multicrystalline ingot silicon solar cells were compared...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
Localized bulk defects like diffusion length variations and structural defects like grain boundaries...
Localized bulk defects like diffusion length variations and structural defects like grain boundaries...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
Influence and passivation of extended crystallographic defects are investigated in large grained pol...
The impact of hydrogen passivation by means of ion implantation has been studied. The surface recomb...
We examine the effectiveness of hydrogen passivation as a function of defect type and microstructure...
Two methods of hydrogen bulk passivation in multicrystalline ingot silicon solar cells were compared...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
The dependency of minority charge carrier lifetime values at grain boundaries in multicrystalline si...
Localized bulk defects like diffusion length variations and structural defects like grain boundaries...
Localized bulk defects like diffusion length variations and structural defects like grain boundaries...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
In this work, we applied internal quantum efficiency mapping to study the recombination activity of ...
Influence and passivation of extended crystallographic defects are investigated in large grained pol...
The impact of hydrogen passivation by means of ion implantation has been studied. The surface recomb...