Enhanced oxidation of thermally grown SiO₂ due to P precipitates

Previous studies of thermal oxidation on a doped structure showed that growth of thermal SiO2 depends on the charge carrier concentration. Here we show that growth behavior of a thermal SiO2 layer also depends strongly on the emitter’s electrically nonactive P concentration. Experimental data show that an increase in P precipitate concentration has a significant influence on the growth kinetics of thermally grown SiO2 layers. Despite constant charge carrier concentration in the emitter, an increase in growth rate up to a factor of 2 was measured in samples with increased inactive P concentration. Quantitative elemental analysis of the thermally grown SiO2 layers further shows that the SiO2 composition can be strongly influenced by the Si substrate’s inactive P concentration.publishe