It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bulk related degradation and regeneration during illuminated treatment at elevated temperature. It is discussed that the likely cause is light and elevated temperature induced degradation (LeTID) in the silicon bulk. Firing is found to modulate the extent of LeTID so that degradation may either be weaker or stronger compared to the non-fired sample depending on firing parameters. A sample which was annealed instead of fired is found to be stable for up to 1,000 h of treatment time.publishe
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H o...
Light and elevated temperature induced degradation (LeTID) varies significantly in multicrystalline ...
Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is...
It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bul...
Light and elevated temperature induced degradation (LeTID) kinetics in float-zone silicon are invest...
The use of different silicon nitride deposition tools is found to change the degree of light induced...
Light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon can reduce t...
This paper discusses degradation phenomena in crystalline silicon. We present new investigations of ...
This work investigates the stability of lifetime samples made of monocrystalline silicon at elevated...
Light and elevated temperature induced degradation (LeTID) affects significantly the performance of ...
Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and elect...
In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon n...
Light and elevated temperature induced degradation (LeTID) affects significantly the performance of ...
Light and elevated temperature induced degradation (LeTID) has become a profound problem for the new...
In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affect...
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H o...
Light and elevated temperature induced degradation (LeTID) varies significantly in multicrystalline ...
Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is...
It is shown that a non-fired B-doped floatzone silicon sample coated with SiNx:H may show severe bul...
Light and elevated temperature induced degradation (LeTID) kinetics in float-zone silicon are invest...
The use of different silicon nitride deposition tools is found to change the degree of light induced...
Light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon can reduce t...
This paper discusses degradation phenomena in crystalline silicon. We present new investigations of ...
This work investigates the stability of lifetime samples made of monocrystalline silicon at elevated...
Light and elevated temperature induced degradation (LeTID) affects significantly the performance of ...
Light and elevated temperature induced degradation (LeTID) negatively impacts the lifetime and elect...
In this study, it is observed that boron-doped float-zone silicon coated with hydrogenated silicon n...
Light and elevated temperature induced degradation (LeTID) affects significantly the performance of ...
Light and elevated temperature induced degradation (LeTID) has become a profound problem for the new...
In this work, we demonstrate a form of minority carrier degradation on n-type Cz silicon that affect...
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H o...
Light and elevated temperature induced degradation (LeTID) varies significantly in multicrystalline ...
Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is...