The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of Mg_xZn_(1−x)O thin films grown on ZnO substrates, ranging from the solubility limit of x ∼ 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to q...
We report on high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial films grown via the PMOCVD method wi...
In the present work, films have been grown under various deposition conditions in order to understan...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
Vegard’s law and inductively coupled plasma atomic emission spectrometry were employed to determine ...
Pure and doped Zn1−xMgxO films were deposited onto glass substrate by ultrasonic spray pyrolysis tec...
Zn 1-xMg xO thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As...
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitax...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
A series of Mg1-xZnxO (x=0, 0.05, 0.10, and 0.15) thin films were grown by metal-organic chemical va...
High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitax...
A series of Mg1-xZnxO (x=0, 0.05, 0.10, and 0.15) thin films were grown by metal-organic chemical va...
The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg 3.5 %, ...
By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled...
MgxZn1-xO has emerged as a material of great technological importance. Having a direct energy band g...
We report on high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial films grown via the PMOCVD method wi...
In the present work, films have been grown under various deposition conditions in order to understan...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...
The growth techniques for Mg_xZn_(1−x)O thin films have advanced at a rapid pace in recent years, en...
Vegard’s law and inductively coupled plasma atomic emission spectrometry were employed to determine ...
Pure and doped Zn1−xMgxO films were deposited onto glass substrate by ultrasonic spray pyrolysis tec...
Zn 1-xMg xO thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As...
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitax...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
A series of Mg1-xZnxO (x=0, 0.05, 0.10, and 0.15) thin films were grown by metal-organic chemical va...
High-quality Zn1-xMgxO(0.00 less than or equal tox less than or equal to0.49) thin films were epitax...
A series of Mg1-xZnxO (x=0, 0.05, 0.10, and 0.15) thin films were grown by metal-organic chemical va...
The paper describes the structural and optical properties of Magnesium doped Zinc Oxide (Mg 3.5 %, ...
By using the spray pyrolysis methodology in its classical configuration we have grown self-assembled...
MgxZn1-xO has emerged as a material of great technological importance. Having a direct energy band g...
We report on high quality, wurtzite MgxZn1-xO (MgZnO) epitaxial films grown via the PMOCVD method wi...
In the present work, films have been grown under various deposition conditions in order to understan...
Zinc oxide is a wide bandgap semiconductor with relatively large exciton energy of 60 meV, and longi...