Atomic reconstruction at the interface of MgZnO and ZnO in molecular beam epitaxy grown heterostructures is investigated. Using secondary ion mass spectroscopy, we experimentally find that Mg atomic reconstruction depends on the polarity of the interface; it is not observed in n-type interfaces (MgZnO on Zn-polar ZnO) owing to electron accumulation, while in p-type interfaces (ZnO on Zn-polar MgZnO), Mg drastically redistributes into the ZnO layer. Combined with self-consistent calculation of band profiles and carrier distributions, we reveal that the observed Mg reconstruction is not due to thermal diffusion but consequences in order to avoid hole accumulation. This tendency implies inherent significant asymmetry of energy scales of atomic...
The remarkable historic advances experienced in condensed matter physics have been enabled through t...
Low-temperature photoluminescence and reflectance measurements were employed to study the optical tr...
MgxZn1-xO is a compound semiconductor material formed by alloying ZnO with MgO. The larger direct ba...
We report on the experimental determination of the spontaneous polarization of wurtzite- (Mg,Zn)O by...
The inherently complex chemical and crystallographic nature of oxide materials has suppressed the pu...
Thin film heterostructures have been at the heart of advances in electronics. The use of material in...
© 2017 The Author(s). We investigate the optical signature of the interface in a single MgZnO/ZnO he...
The discovery of a high-mobility two-dimensional electron gas (2DEG) in wurtzite ZnO/Zn(Mg)O heteros...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep leve...
Abstract(#br)Combining different phase structure materials with unique properties to design novel de...
The controlled growth of Zn-polar ZnO films on Al-terminated α-Al2O3 (0001) substrates is investigat...
We report the formation of two-dimensional electron gas 2DEG at the Zn1−xMgxO/ZnO interface grown b...
MgxZn1-xO is a compound semiconductor material formed by alloying ZnO with MgO. The larger direct ba...
Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed...
The remarkable historic advances experienced in condensed matter physics have been enabled through t...
Low-temperature photoluminescence and reflectance measurements were employed to study the optical tr...
MgxZn1-xO is a compound semiconductor material formed by alloying ZnO with MgO. The larger direct ba...
We report on the experimental determination of the spontaneous polarization of wurtzite- (Mg,Zn)O by...
The inherently complex chemical and crystallographic nature of oxide materials has suppressed the pu...
Thin film heterostructures have been at the heart of advances in electronics. The use of material in...
© 2017 The Author(s). We investigate the optical signature of the interface in a single MgZnO/ZnO he...
The discovery of a high-mobility two-dimensional electron gas (2DEG) in wurtzite ZnO/Zn(Mg)O heteros...
We used depth-resolved cathodoluminescence spectroscopy and surface photovoltage spectroscopy to mea...
Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep leve...
Abstract(#br)Combining different phase structure materials with unique properties to design novel de...
The controlled growth of Zn-polar ZnO films on Al-terminated α-Al2O3 (0001) substrates is investigat...
We report the formation of two-dimensional electron gas 2DEG at the Zn1−xMgxO/ZnO interface grown b...
MgxZn1-xO is a compound semiconductor material formed by alloying ZnO with MgO. The larger direct ba...
Abrupt interfaces between ZnMgO and ZnO are strained due to lattice mismatch. This strain is relaxed...
The remarkable historic advances experienced in condensed matter physics have been enabled through t...
Low-temperature photoluminescence and reflectance measurements were employed to study the optical tr...
MgxZn1-xO is a compound semiconductor material formed by alloying ZnO with MgO. The larger direct ba...