This thesis targets receive front-ends with high linearity for applications such as UMTS, CDMA, GPS, TETRA, and WLAN. It reviews available circuit architectures and linearization techniques and chooses the methods best suited for each problem. All circuits have been designed using production line Silicon-Germanium bipolar and BiCMOS processes. Theoretical considerations, extensive simulations and measurements showed that SiGe HBT technology - despite its exponential current-versus-voltage characteristics - offers higher linearity than pHEMT at low current consumption. For a given supply current, the most linear SiGe HBT LNA uses a single-stage cascode design with narrow band reactive load and inductive series feedback. In order to achieve a...
The objective of the proposed research is to understand the design and reliability of RF front-end b...
The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evalua...
A 30 to 40 GHz receiver fabricated in SiGe is presented. The receiver contains an LO-tripler-amplifi...
As the first stage of the amplifier chain aiming for the base station applications, a highly linear ...
As the first stage of the amplifier chain aiming for the base station applications, a highly linear ...
This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear...
Empirical thesis.Bibliography: pages 213-231.1. Introduction -- 2. Background -- 3. Analysis of harm...
A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Vol...
In the last couple of years, mobile telephony has truly become global, with more than 4 billion user...
This thesis work addresses semiconductor device technology, characterization and modeling solutions ...
This thesis work addresses semiconductor device technology, characterization and modeling solutions ...
This paper presents a high linearity wide bandwidth low noise amplifier (LNA) MMIC with excellent no...
This thesis presents circuit- and device-level linearization techniques to reduce the intermodulatio...
Design of the next generation (4G) systems is one of the most active and important area of research ...
In this thesis the linearity characteristics of passive mixers for wide band homodyne receivers are ...
The objective of the proposed research is to understand the design and reliability of RF front-end b...
The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evalua...
A 30 to 40 GHz receiver fabricated in SiGe is presented. The receiver contains an LO-tripler-amplifi...
As the first stage of the amplifier chain aiming for the base station applications, a highly linear ...
As the first stage of the amplifier chain aiming for the base station applications, a highly linear ...
This research work aims on exploiting SiGe HBT technologies in high dynamic range wideband RF linear...
Empirical thesis.Bibliography: pages 213-231.1. Introduction -- 2. Background -- 3. Analysis of harm...
A 900 MHz three-stage SiGe power amplifier (PA) with high power gain is presented in this paper. Vol...
In the last couple of years, mobile telephony has truly become global, with more than 4 billion user...
This thesis work addresses semiconductor device technology, characterization and modeling solutions ...
This thesis work addresses semiconductor device technology, characterization and modeling solutions ...
This paper presents a high linearity wide bandwidth low noise amplifier (LNA) MMIC with excellent no...
This thesis presents circuit- and device-level linearization techniques to reduce the intermodulatio...
Design of the next generation (4G) systems is one of the most active and important area of research ...
In this thesis the linearity characteristics of passive mixers for wide band homodyne receivers are ...
The objective of the proposed research is to understand the design and reliability of RF front-end b...
The noise properties of silicon and SiGe bipolar technologies at identical de- sign rules are evalua...
A 30 to 40 GHz receiver fabricated in SiGe is presented. The receiver contains an LO-tripler-amplifi...