Millimeter-wave Si/SiGe HBT frequency divider using dynamic and static division stages

In this paper, the authors present a fully integrated frequency divider with a divide ratio of 32, using a 0.8 um Si/SiGe HBT technology. The divider operates at least up to 40 GHz and shows outstanding performance such as broad frequency of operation, compact die area (1130 x 460 um2), reasonable power consumption (150 mA at 5 V supply voltage or 110 mA at 4 V with slightly degraded performance) and excellent sensitivity. The integrated circuit combines the advantages of the dynamic topology (first two stages) which includes an additional transimpedance stage and the static topology (last three stages) in order to reach these excellent results