In this paper, an assessment of the silicon carbide power modules in power inverters is presented. Comparison of total power losses and efficiency of a silicon carbide based three phase inverter with silicon base is analyzed and studied. The efficiency of the silicon carbide b ased inverters based on chosen device is found to be above 99%, and more efficient than most conventional silicon based inverters, especially at high frequency
Three-phase full-bridge inverter power loss models based on experimental data are established and us...
The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interface...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
AbstractThis paper presents the research of a high frequency, high efficiency Solar inverter using s...
This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inv...
This paper evaluates the performance of Silicon Carbide MOSFET and Silicon IGBT modules in a threeph...
This paper evaluates the performance of Silicon Carbide MOSFET and Silicon IGBT modules in a threeph...
This paper presents an efficiency comparison between silicon-carbide technology and silicon technolo...
This paper presents an efficiency comparison between silicon-carbide technology and silicon technolo...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
Three-phase full-bridge inverter power loss models based on experimental data are established and us...
The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interface...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
AbstractThis paper presents the research of a high frequency, high efficiency Solar inverter using s...
This paper presents a novel analytical loss formulation to predict the efficiency of three-phase inv...
This paper evaluates the performance of Silicon Carbide MOSFET and Silicon IGBT modules in a threeph...
This paper evaluates the performance of Silicon Carbide MOSFET and Silicon IGBT modules in a threeph...
This paper presents an efficiency comparison between silicon-carbide technology and silicon technolo...
This paper presents an efficiency comparison between silicon-carbide technology and silicon technolo...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
Three-phase full-bridge inverter power loss models based on experimental data are established and us...
The DC/DC converters and DC/AC inverters based on silicon carbide (SiC) devices as battery interface...
The advantage of Silicon Carbide (SiC) based devices are less thermal management requirements and sm...