Chalcogenide phase change material is based on the fast reversible switching between an amorphous and a crystalline phase. This switching phenomenon is an important characteristic of phase change material. However, understanding of this mechanism is not completely clear. This is particularly so for electrically driven phase change memory where a certain threshold voltage needs to be exceeded to enable sufficient current to flow through the phase change cell for crystallization to occur. Moreover, one of the important properties for memory storage capability is the high switching speed. Since crystallization of phase change material is the time limiting step in storage application a detailed understanding of the fast crystallization process ...
Pr Ahmad Biesy (Président, UJF-Grenoble 1), Pr Rachid Bouchakour(Rapporteur, Université de Provence)...
Phase change materials, typically composed out of Ge, Sb and Te alloys, are materials that can switc...
WOS:000355925600029The high contrast in the electrical resistivity between amorphous and crystalline...
Chalcogenide phase change material is based on the fast reversible switching between an amorphous an...
<p>Chalcogenide phase change (PC) materials can be reversibly transformed between the high resistivi...
After a general definition of phase change materials and a description of their defining properties,...
Phase-change materials are identified as promising candidates for the future non-volatile memory app...
Phase-change materials are identified as promising candidates for the future non-volatile memory app...
Copyright © 2012 American Institute of PhysicsPhase-change devices exhibit characteristic threshold ...
The objective of this experimental study was to develop a method to induce crystallization of sugar ...
Chalcogenide materials are receiving increasing interest for their many applications as active mate...
Phase change memory (PCM) is currently seen as the most promising candidate for a future storage-cla...
Phase change materials have been extensively studied due to their promising applications in phase ch...
Phase change materials based on chalcogenides are key enabling technologies for optical storage, suc...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
Pr Ahmad Biesy (Président, UJF-Grenoble 1), Pr Rachid Bouchakour(Rapporteur, Université de Provence)...
Phase change materials, typically composed out of Ge, Sb and Te alloys, are materials that can switc...
WOS:000355925600029The high contrast in the electrical resistivity between amorphous and crystalline...
Chalcogenide phase change material is based on the fast reversible switching between an amorphous an...
<p>Chalcogenide phase change (PC) materials can be reversibly transformed between the high resistivi...
After a general definition of phase change materials and a description of their defining properties,...
Phase-change materials are identified as promising candidates for the future non-volatile memory app...
Phase-change materials are identified as promising candidates for the future non-volatile memory app...
Copyright © 2012 American Institute of PhysicsPhase-change devices exhibit characteristic threshold ...
The objective of this experimental study was to develop a method to induce crystallization of sugar ...
Chalcogenide materials are receiving increasing interest for their many applications as active mate...
Phase change memory (PCM) is currently seen as the most promising candidate for a future storage-cla...
Phase change materials have been extensively studied due to their promising applications in phase ch...
Phase change materials based on chalcogenides are key enabling technologies for optical storage, suc...
Phase change memory (PCM) is one of the most promising non-volatile memory technologies in the marke...
Pr Ahmad Biesy (Président, UJF-Grenoble 1), Pr Rachid Bouchakour(Rapporteur, Université de Provence)...
Phase change materials, typically composed out of Ge, Sb and Te alloys, are materials that can switc...
WOS:000355925600029The high contrast in the electrical resistivity between amorphous and crystalline...