Characteristics of InGaAs quantum dot infrared photodetectors
- Xu, S. J.
- Chua, S. J.
- Mei, T.
- Wang, X. C.
- Zhang, X. H.
- Karunasiri, G.
- Fan, Weijun
- Wang, C. H.
- Jiang, J.
- Wang, S.
- Xie, X. G.
Publication date
January 1998
DOI Publisher
AIP Publishing Journal
Applied Physics LettersAbstract
A quantum dot infrared photodetector(QDIP) consisting of self-assembled InGaAs quantum dots has been demonstrated. Responsivity of 3.25 mA/W at 9.2 μm was obtained for nonpolarized incident light on the detector with a 45° angle facet at 60 K. The QDIPs exhibit some unique electro-opticcharacteristics such as a strong negative differential photoconductance effect and blueshift of the response peak wavelength.Published versio
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