In this study, 100 μm sealing width of both Al-Ge eutectic bonds and Pt-In Transient Liquid Phase bonds were fabricated and evaluated. The experiments were conducted to determine the feasibility of the bonding for usage in high temperature applications. The samples underwent shear testing to gauge their shear strength at room temperature and at 250°C. Thermal aging was done to determine the effects it has on the respective bondings. The microstructure was also analyzed using SEM and SEM-EDX in which defects such as voids can and are being detected. C-SAM was ultimately done to observe the sample’s hermeticity. Results obtained for Pt-In TLP bonding were encouraging as it recorded an average shear strength value...
Al–Al thermocompression bonding has been studied using test structures relevant for wafer level seal...
This paper presents a new method for wafer-level hermetic encapsulation of MEMS devices using low-te...
This paper reports a novel room temperature hermetic liquid sealing process based on wire bonded “pl...
Hermetic sealing of micro-electro mechanical systems (MEMS) sensors for down-hole application requir...
Les microsystèmes électromécaniques (MEMS) sont une des révolutions issues de la microélectronique d...
Electromechanical microsystems (MEMS) are one of the main revolutions of microelectronics in recent ...
Hermeticity, reliability and strength of Al-Al thermocompression bonds realized by applying differen...
Complex engineering systems ranging from automobile engines to geothermal wells require specialized ...
Wafer level hermetic encapsulation of MEMS is crucial from both commercial and scientific...
In MEMS industry there is a high demand for reliable hermetic wafer-level encapsulation. This paper ...
This paper presents the fabrication of wafer-level hermetic encapsulation for MEMS devices using low...
Hermetic packaging is often an essential requirement to enable proper functionality throughout the d...
Localized heating and bonding techniques have been developed for hermetic and vacuum packaging of ME...
This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsul...
This research project aims to investigate the suitability of glass frit bonding for multi-chip modul...
Al–Al thermocompression bonding has been studied using test structures relevant for wafer level seal...
This paper presents a new method for wafer-level hermetic encapsulation of MEMS devices using low-te...
This paper reports a novel room temperature hermetic liquid sealing process based on wire bonded “pl...
Hermetic sealing of micro-electro mechanical systems (MEMS) sensors for down-hole application requir...
Les microsystèmes électromécaniques (MEMS) sont une des révolutions issues de la microélectronique d...
Electromechanical microsystems (MEMS) are one of the main revolutions of microelectronics in recent ...
Hermeticity, reliability and strength of Al-Al thermocompression bonds realized by applying differen...
Complex engineering systems ranging from automobile engines to geothermal wells require specialized ...
Wafer level hermetic encapsulation of MEMS is crucial from both commercial and scientific...
In MEMS industry there is a high demand for reliable hermetic wafer-level encapsulation. This paper ...
This paper presents the fabrication of wafer-level hermetic encapsulation for MEMS devices using low...
Hermetic packaging is often an essential requirement to enable proper functionality throughout the d...
Localized heating and bonding techniques have been developed for hermetic and vacuum packaging of ME...
This paper reports on low-temperature and hermetic thin-film indium bonding for wafer-level encapsul...
This research project aims to investigate the suitability of glass frit bonding for multi-chip modul...
Al–Al thermocompression bonding has been studied using test structures relevant for wafer level seal...
This paper presents a new method for wafer-level hermetic encapsulation of MEMS devices using low-te...
This paper reports a novel room temperature hermetic liquid sealing process based on wire bonded “pl...