Add to ORKGCarbon is a superior p-type dopant to beryllium or zinc in GaAs and InGaAs primarily because of its lower diffusion coefficient and higher electrical activity. The usage of carbon in the base of heterojunction bipolar transistors (HBTs) increases the device reliability. Carbon tetrabromide (CBr4) has become a popular choice for carbon doping precursors because of its high doping efficiency and relative insensitivity to growth conditions. Solid-source molecular beam epitaxy (SSMBE) offers the advantage of a hydrogen-free environment for the growth of carbon-doped IH-V semiconductor layers, eliminating the passivation of carbon acceptors by hydrogen that is commonly observed in carbon doped GaAs (or InGaAs) layers grown by techniques with hyd...
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor dep...
Quasi-planar GaAs/GaInP heterojunction bipolar transistor (HBT) structures, fabricated with selectiv...
Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow...
Carbon is a superior p-type dopant to beryllium or zinc in GaAs and InGaAs primarily because of its ...
Abstract-The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBT’s) with p-type carbon do...
We report the improved thermal stability of heavily C-doped GaAs layers using atomic layer chemical ...
The results described in this work demonstrate the comprehensive characterization of C-doped GaAs an...
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\r...
Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epit...
[[abstract]]The redistribution of carbon during molecular beam epitaxy (MBE) growth of GaAs n‐i‐p+‐i...
A new design of carbon source using a S-shaped glassy carbon filament for p-doping and carbon deposi...
We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was use...
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has...
We report, for the first time, the growth and electrical properties of low resistance carbon-doped p...
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieve...
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor dep...
Quasi-planar GaAs/GaInP heterojunction bipolar transistor (HBT) structures, fabricated with selectiv...
Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow...
Carbon is a superior p-type dopant to beryllium or zinc in GaAs and InGaAs primarily because of its ...
Abstract-The first N-p-n InP/InGaAs heterojunction bipolar transistors (HBT’s) with p-type carbon do...
We report the improved thermal stability of heavily C-doped GaAs layers using atomic layer chemical ...
The results described in this work demonstrate the comprehensive characterization of C-doped GaAs an...
A dilute mixture of CCl$\sb4$ in high purity H$\sb2$ has been used as a carbon dopant source for $\r...
Carbon tetrabromide (CBr4) was studied as an intentional dopant during rf plasma molecular beam epit...
[[abstract]]The redistribution of carbon during molecular beam epitaxy (MBE) growth of GaAs n‐i‐p+‐i...
A new design of carbon source using a S-shaped glassy carbon filament for p-doping and carbon deposi...
We have studied carbon doping of GaInAs grown by gas-source molecular beam epitaxy. Graphite was use...
The development of carbon doping for producing stable p-type doping profiles in MOCVD-grown GaAs has...
We report, for the first time, the growth and electrical properties of low resistance carbon-doped p...
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieve...
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor dep...
Quasi-planar GaAs/GaInP heterojunction bipolar transistor (HBT) structures, fabricated with selectiv...
Metalorganic Chemical Vapor Deposition (MOCVD) is a versatile growth technique commonly used to grow...