Add to ORKGA novel approach to formulating unified compact threshold voltage and drain current models for deep-submicron MOSFETs are present, which is based on a combined anlaytical derivation, (2-D) numerical simulation, and experimental correlation.Doctor of Philosophy (EEE
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
In this paper, an analytical model representing a long channel MOSFET structure with larger effectiv...
150 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.Variations of the device char...
Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET t...
The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is ex...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
Abstract—We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descrip...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
An improved physically-based model for deep-submicrometer SOI dynamic threshold-voltage MOSFET (DTMO...
This paper presents a novel, simple, single-piece MOSFET model, suitable for submicron and deep subm...
The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating subm...
A new analytical model is presented for the threshold voltage of fully depleted silicon-on-insulator...
The threshold voltage, Vth of fully depleted silicon-on-insulator (FDSOI) MOSFET with effective chan...
The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. T...
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
In this paper, an analytical model representing a long channel MOSFET structure with larger effectiv...
150 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.Variations of the device char...
Concept of new compact model for the simulation of deep submicron (DSM), nanometer-scale MOFFET t...
The predictive technology modeling using numerical and compact model for deep-submicron MOSFET is ex...
The technology of CMOS large-scale integrated circuits (LSI's) achieved remarkable advances over las...
Abstract—We discuss and develop a compact MOSFET modeling scheme in order to obtain accurate descrip...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET wi...
An improved physically-based model for deep-submicrometer SOI dynamic threshold-voltage MOSFET (DTMO...
This paper presents a novel, simple, single-piece MOSFET model, suitable for submicron and deep subm...
The Lightly Doped Drain (LDD) structure is the current-art transistor structure for fabricating subm...
A new analytical model is presented for the threshold voltage of fully depleted silicon-on-insulator...
The threshold voltage, Vth of fully depleted silicon-on-insulator (FDSOI) MOSFET with effective chan...
The authors propose a simple model for the operation of MOSFETs in both weak and strong inversion. T...
Abstract-A new simplified two-dimensional model for the threshold voltage of MOSFET’s is derived in ...
In this paper, an analytical model representing a long channel MOSFET structure with larger effectiv...
150 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.Variations of the device char...