Electrical and physical property study of thin films grown by laser molecular beam epitaxy

In this project, 50nm/100nm-thick epitaxial SrRuO3 and BaTiO3 thin films were grown on , and SrTiO3 substrates by Laser Molecular Beam Epitaxy (LMBE) at 650°C. Lift-off process is performed to create the metallic contact for the resistivity characterization on SrRuO3/ SrTiO3 and capacitance characterization on BaTiO3/ SrTiO3. The experiment result shows that the resistivity is dependent on the film crystal orientation. The resistivity of SrRuO3/ SrTiO3 is the lowest, followed by the resistivity of SrRuO3/ SrTiO3 and the resistivity of SrRuO3/ SrTiO3 is the highest. The ferroelectricity of BaTiO3 makes it a suitable material to make capacitor due to its high dielectric constant. This is critical as it allows a thicker insulating layer while maintaining a high capacitance to reduce the resulting leakage current.Bachelor of Engineerin