Add to ORKGThis thesis presents our findings on Cu diffusion into different potential barrier layers.Doctor of Philosophy (EEE
216 p.In the sub-quarter-micron generation integrated circuits (ICs), Cu has completely replaced alu...
Aluminum is the current metal of choice for metallization in the IC industry. However, serious elect...
Over the last several years, interconnections used in the semiconductor industry have advanced as fe...
The technological trend of shrinking integrated circuits in order to increase the logic density and ...
10.1016/S0921-5107(99)00517-6Materials Science and Engineering B: Solid-State Materials for Advanced...
Currently, the material of choice for interconnects on silicon devices is aluminum. This is because ...
textCopper diffusion barriers are necessary to contain copper within microelectronics interconnect ...
Copper represents the most commonly used interconnect material in ultra large-scale integration (ULS...
International audienceThe diffusion of Cu through TaN-based thin layers into a Si substrate has been...
As a main part of thermal stability studies , the atomic intermixing, new compound formation and pha...
The focus of this thesis is the fabrication and characterisation of ultra-thin self-forming Cu diffu...
a b s t r a c t One of the most important processes in Cu metallization for highly integrated circui...
This dissertation presents a study of Ta-based Cu diffusion barrier for advanced semiconductor techn...
The utilization of copper as an interconnect material requires application of barrier films in order...
Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However,...
216 p.In the sub-quarter-micron generation integrated circuits (ICs), Cu has completely replaced alu...
Aluminum is the current metal of choice for metallization in the IC industry. However, serious elect...
Over the last several years, interconnections used in the semiconductor industry have advanced as fe...
The technological trend of shrinking integrated circuits in order to increase the logic density and ...
10.1016/S0921-5107(99)00517-6Materials Science and Engineering B: Solid-State Materials for Advanced...
Currently, the material of choice for interconnects on silicon devices is aluminum. This is because ...
textCopper diffusion barriers are necessary to contain copper within microelectronics interconnect ...
Copper represents the most commonly used interconnect material in ultra large-scale integration (ULS...
International audienceThe diffusion of Cu through TaN-based thin layers into a Si substrate has been...
As a main part of thermal stability studies , the atomic intermixing, new compound formation and pha...
The focus of this thesis is the fabrication and characterisation of ultra-thin self-forming Cu diffu...
a b s t r a c t One of the most important processes in Cu metallization for highly integrated circui...
This dissertation presents a study of Ta-based Cu diffusion barrier for advanced semiconductor techn...
The utilization of copper as an interconnect material requires application of barrier films in order...
Bilayer of Ta/TaN is the common diffusion barrier for Cu metallization in microelectronics. However,...
216 p.In the sub-quarter-micron generation integrated circuits (ICs), Cu has completely replaced alu...
Aluminum is the current metal of choice for metallization in the IC industry. However, serious elect...
Over the last several years, interconnections used in the semiconductor industry have advanced as fe...