94 p.The dissertation studied temperature dependence of DC and RF characteristics in 0.18um MOSFETs. For DC characteristics, studies on temperature dependences of drain source current l^s, transconductance Gm and threshold voltage Vth were carried out. The effect of temperature variation on RF parameters, such as cutoff frequency ft, maximum oscillation frequency fmax, minimum noise figure NFmin, noise resistance Rn, associated gain and Gamma Opt, were systematically studied in the temperature range of 300K to 400K.Master of Science (Electronics
This paper presents a new approach to optimize the RF performance at high temperatures for low power...
RF figures of merit are deeply investigated, both analytically and experimentally, to provide a comp...
Abstract—In this letter, the capacitance characteristics of RF LDMOS transistors with different temp...
At zero-temperature-coefficient bias points, transistors are known to have stable DC performance wit...
[[abstract]]In this paper, we demonstrate analyses of the effects of temperature (from -50degreesC t...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
In this work, the effect of rise in temperature from 25 ∘ C to 175 ∘ C on the performance of 22-nm f...
Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer b...
[[abstract]]In this paper, we demonstrate analyses of the effects of temperature (from -50degreesC t...
ABSTRACT The existing compact models can reproduce the characteristics of MOSFETs in the temperature...
Temperature fluctuations alter threshold voltage, carrier mobility, and saturation velocity of a MOS...
This work presents the high-temperature DC and RFbehaviorsofpartially-depletedSOI MOSFETs. DC and RF...
DC and RF characteristics of n-type FinFET transistor over a wide temperature range, from 77 to 473K...
This paper presents a new approach to optimize the RF performance at high temperatures for low power...
RF figures of merit are deeply investigated, both analytically and experimentally, to provide a comp...
Abstract—In this letter, the capacitance characteristics of RF LDMOS transistors with different temp...
At zero-temperature-coefficient bias points, transistors are known to have stable DC performance wit...
[[abstract]]In this paper, we demonstrate analyses of the effects of temperature (from -50degreesC t...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
A Zero Temperature Coefficient characteristic is presented and characterized for the first time for ...
In this work, the effect of rise in temperature from 25 ∘ C to 175 ∘ C on the performance of 22-nm f...
Abstract—The temperature dependence of high-frequency noise characteristics for deep-submicrometer b...
[[abstract]]In this paper, we demonstrate analyses of the effects of temperature (from -50degreesC t...
ABSTRACT The existing compact models can reproduce the characteristics of MOSFETs in the temperature...
Temperature fluctuations alter threshold voltage, carrier mobility, and saturation velocity of a MOS...
This work presents the high-temperature DC and RFbehaviorsofpartially-depletedSOI MOSFETs. DC and RF...
DC and RF characteristics of n-type FinFET transistor over a wide temperature range, from 77 to 473K...
This paper presents a new approach to optimize the RF performance at high temperatures for low power...
RF figures of merit are deeply investigated, both analytically and experimentally, to provide a comp...
Abstract—In this letter, the capacitance characteristics of RF LDMOS transistors with different temp...