A strained-modified, single-band, constant-potential three-dimensional model is formulated to study the dependence of electronic states of InAs/GaAs quantum dots QDs on shape and size variation. The QD shapes considered are i cuboid, ii cylindrical, iii pyramidal, iv conical, and v lens shaped. Size variations include i QD volume ii QD base length, and iii QD height, taking into account aspect ratio variation. Isovolume QD shapes with narrow tips were found to have higher ground-state energies than those with broad tips, and this is attributed to the smaller effective volume. The volume, base length, and height dependencies were obtained and found to tally well with both experimental results and advanced calculations...
In this paper, how the dots' radius, At concentration and external electric field affect the single ...
This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (...
The authors report on the impact of wetting layer thickness and quantum dot size on the electronic a...
A strained-modified, single-band, constant-potential three-dimensional model is formulated to study ...
We have studied the effect of shape on the strain-modified electron/hole confinement potential in zi...
The shape of truncated square-based pyramid quantum dots (QDs) is similar to that of real QDs in exp...
Quantum dots (QDs) allow for manipulation of the position and energy levels of electrons at sub-10 n...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
The dependence of the electronic energy levels on the size of quantum dots (QDs) with the shape of s...
Using a recently developed new scheme, we investigated the electronic structure of the lowest conduc...
ABSTRACT Semiconductor quantum dots have been of major interest in recent years. This has largely be...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
In this paper, we used the 8-band k$\cdot$p model with valence force field considerations to investi...
In this paper, how the dots' radius, At concentration and external electric field affect the single ...
This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (...
The authors report on the impact of wetting layer thickness and quantum dot size on the electronic a...
A strained-modified, single-band, constant-potential three-dimensional model is formulated to study ...
We have studied the effect of shape on the strain-modified electron/hole confinement potential in zi...
The shape of truncated square-based pyramid quantum dots (QDs) is similar to that of real QDs in exp...
Quantum dots (QDs) allow for manipulation of the position and energy levels of electrons at sub-10 n...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
The dependence of the electronic energy levels on the size of quantum dots (QDs) with the shape of s...
Using a recently developed new scheme, we investigated the electronic structure of the lowest conduc...
ABSTRACT Semiconductor quantum dots have been of major interest in recent years. This has largely be...
A method for the calculation of the electronic structure of truncated-cone self-assemled InAs/GaAs q...
This work is an investigation into the electronic behaviour of semiconductor quantum dots, particula...
We present a theoretical analysis of the optical matrix element between the electron and hole ground...
In this paper, we used the 8-band k$\cdot$p model with valence force field considerations to investi...
In this paper, how the dots' radius, At concentration and external electric field affect the single ...
This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (...
The authors report on the impact of wetting layer thickness and quantum dot size on the electronic a...