Add to ORKGThe floating gate EEPROM has been a popular choice for semiconductor memories for many years. In this thesis, several areas relating to design concerns of the device have been explored. Phenomena such as charge trapping in tunnel oxide was investigated using the thin oxide MOS capacitor while device degradation was invesigaed on the EEPROM cell.Master of Engineerin
The present paper illustrates the modelling and simulation of an Electrically Erasable Programmable ...
Gate-All-Around (GAA) transistor is one of the excellent devices that has been utilized for flash me...
A new flash EEPROM cell and a novel erasing scheme on SOI substrates are reported. This flash EEPROM...
The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In thi...
Non volatile memories hold 30% of the global volume of semiconductor memory market nowadays. The gen...
The author reports an investigation into the design and process constraints of flash EEPROM memory c...
The author reports an investigation into the design and process constraints of flash EEPROM memory c...
A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This ...
Electrically Erasable Programmable Read Only Memory (EEPROM) test structures have been studied using...
This work presents new experimental data on ultra-low level Stress Induced Leakage Currents measured...
The core of the EEPROM memory cell is the tunnel oxide grown on an n(+) implant named capacitor impl...
The concept of SFGEEPROM involves the replacement of the standard EEPROM’s floating gate with a mult...
Circuit simulation enters into a new stage of enhanced importance. From the conventional circuit sim...
Non-Volatile Memory (NVM) devices store data in floating gates in binary form with electrical charge...
Degradation of the tunneling oxide film in EEPROM and FLASH memory test structures has been studied....
The present paper illustrates the modelling and simulation of an Electrically Erasable Programmable ...
Gate-All-Around (GAA) transistor is one of the excellent devices that has been utilized for flash me...
A new flash EEPROM cell and a novel erasing scheme on SOI substrates are reported. This flash EEPROM...
The floating gate EEPROM has been a popular choice for semiconductor memories for many years. In thi...
Non volatile memories hold 30% of the global volume of semiconductor memory market nowadays. The gen...
The author reports an investigation into the design and process constraints of flash EEPROM memory c...
The author reports an investigation into the design and process constraints of flash EEPROM memory c...
A floating capacitor with a MOS charge injector structure can be used as a nonvolatile memory. This ...
Electrically Erasable Programmable Read Only Memory (EEPROM) test structures have been studied using...
This work presents new experimental data on ultra-low level Stress Induced Leakage Currents measured...
The core of the EEPROM memory cell is the tunnel oxide grown on an n(+) implant named capacitor impl...
The concept of SFGEEPROM involves the replacement of the standard EEPROM’s floating gate with a mult...
Circuit simulation enters into a new stage of enhanced importance. From the conventional circuit sim...
Non-Volatile Memory (NVM) devices store data in floating gates in binary form with electrical charge...
Degradation of the tunneling oxide film in EEPROM and FLASH memory test structures has been studied....
The present paper illustrates the modelling and simulation of an Electrically Erasable Programmable ...
Gate-All-Around (GAA) transistor is one of the excellent devices that has been utilized for flash me...
A new flash EEPROM cell and a novel erasing scheme on SOI substrates are reported. This flash EEPROM...