Add to ORKGThis thesis records the details of two investigations that were performed. The first investigation, believed to be the first of its kind, was on the study of the feasibility of using second harmonic microscopy (SHM) to measure copper concentration and possible diffusion mechanisms at the surfaces and interfaces of microelectronic interconnect structures. The second investigation was on the impact of intentional copper contamination on the performance of semiconductor devices. Copper contamination, both from backside and frontside of wafers were studiedMaster of Engineerin
Bumpless interconnects and ultra-thinning of 300 mm wafers for three-dimensional (3D) stacking techn...
Due to the character of the original source materials and the nature of batch digitization, quality ...
For the fabrication of ULSI circuits, the silicon surface should be free of metallic and particulate...
This thesis records the details of two investigations that were performed. The first investigation, ...
Several concurrent subprojects have been undertaken under the main project ?Fabrication and Characte...
Electromigration is an important failure mechanism which affects the functionality and lifetime of i...
Contamination of silicon with trace amounts of copper during processing can adversely affect the gat...
Copper in silicon is known to have detrimental effects on silicon devices. Therefore, understanding ...
While defects have always been a concern in wafer processing, until recently little attention has f...
Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to crea...
As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on ...
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metalliz...
The volatile acids impact on the via resistance of a Cu interconnect base structure was investigated...
Abstract—Chloride ions (Cl−) in the cleanroom environment induce metal corrosion of integrated circu...
Le cuivre est un contaminant majeur du silicium, connu pour être à l'origine de défaillances de comp...
Bumpless interconnects and ultra-thinning of 300 mm wafers for three-dimensional (3D) stacking techn...
Due to the character of the original source materials and the nature of batch digitization, quality ...
For the fabrication of ULSI circuits, the silicon surface should be free of metallic and particulate...
This thesis records the details of two investigations that were performed. The first investigation, ...
Several concurrent subprojects have been undertaken under the main project ?Fabrication and Characte...
Electromigration is an important failure mechanism which affects the functionality and lifetime of i...
Contamination of silicon with trace amounts of copper during processing can adversely affect the gat...
Copper in silicon is known to have detrimental effects on silicon devices. Therefore, understanding ...
While defects have always been a concern in wafer processing, until recently little attention has f...
Semiconductor devices are built using hyperpure silicon and very controlled levels of doping to crea...
As the miniaturization keeps decreasing in semiconductor device fabrication, metal contamination on ...
Results are presented on the stress studies in various diffusion barriers used in Al and Cu metalliz...
The volatile acids impact on the via resistance of a Cu interconnect base structure was investigated...
Abstract—Chloride ions (Cl−) in the cleanroom environment induce metal corrosion of integrated circu...
Le cuivre est un contaminant majeur du silicium, connu pour être à l'origine de défaillances de comp...
Bumpless interconnects and ultra-thinning of 300 mm wafers for three-dimensional (3D) stacking techn...
Due to the character of the original source materials and the nature of batch digitization, quality ...
For the fabrication of ULSI circuits, the silicon surface should be free of metallic and particulate...