Add to ORKGTi is used to improve wettability between Al and Si. TiN is used as a diffusion barrier to prevent diffusion of Al into Si during annealing. In this study, stress from Ti and TiN thin-films on (100) Silicon wafers are studied using Stoney’s equation. [1st Award
The electrical, metallurgical, and mechanical behavior of the Ti films heat-treated in a rapid therm...
The hardness of Ti/TiN nanolaminated films is investigated in this study. Monolithic Ti and TiN film...
Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimizati...
[[abstract]]High resolution TEM becomes more powerful when coupled with a Gatan imaging filter (GIF)...
Abstract-High resolution TEM becomes more powerful when coupled with a Gatan imaging filter (GIF). I...
This article is related to the development of a protocol for the characterization of the behavior of...
Stress in a thin film on a flexible substrate induces a curvature of the substrate. Usually the subs...
In this work, an investigation of the properties of nanoscale-thick Ti/TiN, TiN, W, WN layers as dif...
This project mainly documents the theory, experimental results and analysis of local stress and full...
[[abstract]]A comparative study of rapid thermal nitridation (RTN) of Ti, reactively-ion-sputtered (...
The effect of stress in silicon nitride films on boron diffusion of silicon has been studied. Dur in...
The paper focuses on a particular silicon nitride thin film(SiNx) produced by plasma enahanced chemi...
An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells,...
Metallic wafer bonding has emerged as a key technology for microelectronics and MEMS. The Si wafers ...
Metallic wafer bonding is becoming a key enabling technology in microelectromechanical systems packa...
The electrical, metallurgical, and mechanical behavior of the Ti films heat-treated in a rapid therm...
The hardness of Ti/TiN nanolaminated films is investigated in this study. Monolithic Ti and TiN film...
Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimizati...
[[abstract]]High resolution TEM becomes more powerful when coupled with a Gatan imaging filter (GIF)...
Abstract-High resolution TEM becomes more powerful when coupled with a Gatan imaging filter (GIF). I...
This article is related to the development of a protocol for the characterization of the behavior of...
Stress in a thin film on a flexible substrate induces a curvature of the substrate. Usually the subs...
In this work, an investigation of the properties of nanoscale-thick Ti/TiN, TiN, W, WN layers as dif...
This project mainly documents the theory, experimental results and analysis of local stress and full...
[[abstract]]A comparative study of rapid thermal nitridation (RTN) of Ti, reactively-ion-sputtered (...
The effect of stress in silicon nitride films on boron diffusion of silicon has been studied. Dur in...
The paper focuses on a particular silicon nitride thin film(SiNx) produced by plasma enahanced chemi...
An evaporated Al layer is known as an excellent rear metallization for highly efficient solar cells,...
Metallic wafer bonding has emerged as a key technology for microelectronics and MEMS. The Si wafers ...
Metallic wafer bonding is becoming a key enabling technology in microelectromechanical systems packa...
The electrical, metallurgical, and mechanical behavior of the Ti films heat-treated in a rapid therm...
The hardness of Ti/TiN nanolaminated films is investigated in this study. Monolithic Ti and TiN film...
Understanding the stress behaviour in atomic layer deposited (ALD) thin films enables the optimizati...