4H-SiC wafers studied by X-ray absorption and Raman scattering
- Mendis, Suwan P.
- Xu, Qiang
- Sun, Hua Yang
- Chen, Cheng
- Jang, Ling-Yun
- E. Rusli
- Tin, Chin Che
- Qiu, Zhi Ren
- Wu, Zhengyun
- Liu, Chee Wee
- Feng, Zhe Chuan
Publication date
January 2012
DOI Publisher
Trans Tech Publications, Ltd.Abstract
Synchrotron radiation X-ray absorption and UV 325 nm excitation Raman scattering- photoluminescence (PL) have been employed to investigate a series of 4H-SiC wafers, including bulk, epitaxial single or multiple layer structures by chemical vapor deposition. Significant results on the atomic bonding and PL-Raman properties are obtained from these comparative studies
Add to ORKG