Basic building block of CMOS integrated circuit like inverter, NAND, Latch and Full Adder will be simulated under low voltage condition using the Cadence software. This is an attempt to study the operations of these circuits when voltage is lowered to reduce the power consumption. Results will then be used to observe the impact of the voltage reduction on speed, data distortion and power consumption. Limit on the operating voltage at the testing frequency and the quality of the waveforms when the frequency is reduced can also be observed. Testing is also conducted for different design of Full Adders to understand how different design may also impact the performance at low operating voltage. This will also demonstrate how utilizing different...
Design and simulation of conventional CMOS full adder using 45nm technology at specified node has be...
Analog IC Techniques lor Low-Voltage Low Power Electronics addresses many very important, but recent...
As the technology scaling reduces the gate oxide thickness and the gate length thereby increasing th...
Basic building block of CMOS integrated circuit like inverter, NAND, Latch and Full Adder will be si...
With the development of IC design, power consumption of the circuit is always being an important asp...
Designing analog circuits that can operate from low supply voltages has become ofincreasing importan...
Motivated by emerging battery operated applications that demand intensive computation in portable en...
With the increase in device integration level and the growth in complexity of Integrated circuits, s...
This investigation reports on the power dissipation of different CMOS adders implementations. Analyz...
Speed and density IC devices have seen exponential growth in the past few decades. Especially in ...
The bulk of the power consumption for conventional CMOS dynamic logic is usually contributed as a...
Abstract—Motivated by emerging battery-operated applica-tions that demand intensive computation in p...
Power consumption is the bottleneck of system performance. Power reduction has become an important i...
This contribution addresses the issue of low-voltage analog circuit design in CMOS technology. In pa...
This paper puts forward different low power adder cells using different XOR gate architectures. Adde...
Design and simulation of conventional CMOS full adder using 45nm technology at specified node has be...
Analog IC Techniques lor Low-Voltage Low Power Electronics addresses many very important, but recent...
As the technology scaling reduces the gate oxide thickness and the gate length thereby increasing th...
Basic building block of CMOS integrated circuit like inverter, NAND, Latch and Full Adder will be si...
With the development of IC design, power consumption of the circuit is always being an important asp...
Designing analog circuits that can operate from low supply voltages has become ofincreasing importan...
Motivated by emerging battery operated applications that demand intensive computation in portable en...
With the increase in device integration level and the growth in complexity of Integrated circuits, s...
This investigation reports on the power dissipation of different CMOS adders implementations. Analyz...
Speed and density IC devices have seen exponential growth in the past few decades. Especially in ...
The bulk of the power consumption for conventional CMOS dynamic logic is usually contributed as a...
Abstract—Motivated by emerging battery-operated applica-tions that demand intensive computation in p...
Power consumption is the bottleneck of system performance. Power reduction has become an important i...
This contribution addresses the issue of low-voltage analog circuit design in CMOS technology. In pa...
This paper puts forward different low power adder cells using different XOR gate architectures. Adde...
Design and simulation of conventional CMOS full adder using 45nm technology at specified node has be...
Analog IC Techniques lor Low-Voltage Low Power Electronics addresses many very important, but recent...
As the technology scaling reduces the gate oxide thickness and the gate length thereby increasing th...