Vertical and lateral ordering of quantum dots in superlattices is shown to be determined by the elastic anisotropy of the matrix material and by the growth orientation. For large anisotropies, complicated dot stacking sequences with correlations inclined to the growth axis may be formed, and the lateral ordering tendency is much stronger than for isotropic materials
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotrop...
We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally ...
Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs...
A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in ...
Lateral ordering of semiconductor quantum dots (QDs) of high quality in well-defined arrangements is...
We have established a new concept for creating ordered arrays of quantum dots by self-organized epit...
Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-a...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized aniso...
Lateral InAs quantumdot (QD) molecules are created by self-organized anisotropic strain engineering ...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
The two-dimensional strain distribution in a GaN/AlN quantum-dot (QD) superlattice is measured from ...
We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are i...
The morphologies of quantum dots and distributions of stresses in and around quantum dots ...
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotrop...
We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally ...
Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs...
A systematic investigation of the strain distribution of self-organized, lens-shaped quantum dot in ...
Lateral ordering of semiconductor quantum dots (QDs) of high quality in well-defined arrangements is...
We have established a new concept for creating ordered arrays of quantum dots by self-organized epit...
Buried two-dimensional arrays of InP dots were used as a template for the lateral ordering of self-a...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
Ordered groups of InAs quantum dots (QDs), lateral QD molecules, are created by self-organized aniso...
Lateral InAs quantumdot (QD) molecules are created by self-organized anisotropic strain engineering ...
Lateral ordering of self-organized quantum dots in a SiGe/Si (001) multilayer has been investigated ...
The two-dimensional strain distribution in a GaN/AlN quantum-dot (QD) superlattice is measured from ...
We report a quantum dot (QD) ensemble structure in which the in-plane arrangements of the dots are i...
The morphologies of quantum dots and distributions of stresses in and around quantum dots ...
An ordered lattice of lateral InAs quantum dot (QD) molecules is created by self-organized anisotrop...
We report a structure of (In, Ga)As/GaAs quantum dots which are vertically correlated and laterally ...
Self-organized anisotropic strain engineering is combined with growth on artificially patterned GaAs...