Adsorption of Rb on Si(211)2×1 studied by the x‐ray standing wave technique

The Rb/Si(211)2×1 interface has been investigated by using the x‐ray standing wave technique for different adsorbate coverages. The Rb adsorbate distances were determined from the [111], [110], and [211] lattice planes. The simultaneous use of three different reflections allowed the performance of a triangulation to determine the adsorption site, which corresponds at room temperature (θRb=0.7 ML) to the hollow site of eclipsed type, being every third Rb atom coherently located. After coverage reduction through annealing, changes in the adsorbate distances were observed. The new values are compatible with partial occupation of on‐top sites