Furnace annealing of GaAs, InP and related compounds in arsenic and phosphorus atmosphere, respectively, is carried out usually either in single-zone or in double-zone arrangements. By use of the double-zone furnace, the independent control both of the annealing temperature and of the total pressure is possible. The composition of vapour, i.e. the As2/As4 and P2/P4 ratio, respectively, depending both on the temperature up to 1318 K and on the total pressure (10−2–1 bar) was determined by Raman spectroscopy analysing the intensity ratio of the vibrational modes of As2, As4 and P2, P4, respectively. These experimental data were compared with the partial pressure ratio calculated by means of the ChemSage database. Raman and ChemSage data show ...
Incorporation of excess As in GaAs layers grown by molecular beam epitaxy was studied by varying As ...
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (Ga...
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (Ga...
Furnace annealing of GaAs, InP and related compounds in arsenic and phosphorus atmosphere, respectiv...
In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are...
We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had b...
The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs dur...
Interfacial chemical reactions occurring on the surface of thermally annealed single-crystal GaAs ha...
The use of trimethylarsenic(TMAs) in place of arsine in metal organics vapour phase epitaxy (MOVPE) ...
We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the out...
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied...
The technique of arsenic-contained compounds synthesis has been developed. The experimental samples ...
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied...
Precipitation processes in the p-type, n-type, and intrinsic GaAs layers grown by molecular beam epi...
The toxicity of arsenic depends on its chemical form. Organo-arsenic compounds are acknowledged to b...
Incorporation of excess As in GaAs layers grown by molecular beam epitaxy was studied by varying As ...
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (Ga...
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (Ga...
Furnace annealing of GaAs, InP and related compounds in arsenic and phosphorus atmosphere, respectiv...
In-situ Raman scattering results on vapor of phosphorus and arsenic at temperatures up to 1400 K are...
We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had b...
The formation of arsenic clusters in a system of vertically aligned InAs quantum islands on GaAs dur...
Interfacial chemical reactions occurring on the surface of thermally annealed single-crystal GaAs ha...
The use of trimethylarsenic(TMAs) in place of arsine in metal organics vapour phase epitaxy (MOVPE) ...
We report on Raman scattering measurements on annealed In0.53Ga0.47As/InP layers that reveal the out...
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied...
The technique of arsenic-contained compounds synthesis has been developed. The experimental samples ...
The precipitation of arsenic in GaAs epitaxially grown at low temperature (LT GaAs) has been studied...
Precipitation processes in the p-type, n-type, and intrinsic GaAs layers grown by molecular beam epi...
The toxicity of arsenic depends on its chemical form. Organo-arsenic compounds are acknowledged to b...
Incorporation of excess As in GaAs layers grown by molecular beam epitaxy was studied by varying As ...
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (Ga...
The incorporation and amphoteric behavior of Group IV impurities in high purity gallium arsenide (Ga...