Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy on clean Ge(001)2×1 surfaces we determined the binding energies of occupied and unoccupied surface states associated with the surface dimer of the 2×1 reconstruction at the high symmetric points, Γ, J, J′, 12JK and K of the surface Brillouin zone. Together with the experimentally determined valence band maximum the results will be compared on an absolute energy scale with recent surface band structure calculations
The experimental study of the bonding geometry of a (100)Ge surface exposed to H₂S in the gas phase ...
We have investigated the close packed 3 root 3 x 3 root 3R30 degrees-C-60 monolayer on the Ge(111) s...
The surface electronic structure of the Mg (10 1̄ 0) surface has been investigated by angle-resolved...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
The valence band structure of the (2×1) reconstructed surface of ZnSe{001} has been investigated usi...
The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by...
The surface band gap of the Ge(111)c(2×8) surface at low temperature is determined on the basis of s...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectro...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
This paper describes a study concerning the interaction of oxygen with clean Ge(001)2 × 1 surfaces i...
AbstractThe valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe ...
We present the result of a combined ab initio theoretical study and ultraviolet photoemission spectr...
Abstract. The electronic structure of a Na/Ge(111)–3 1 surface was investigated by valence-band and...
The experimental study of the bonding geometry of a (100)Ge surface exposed to H₂S in the gas phase ...
We have investigated the close packed 3 root 3 x 3 root 3R30 degrees-C-60 monolayer on the Ge(111) s...
The surface electronic structure of the Mg (10 1̄ 0) surface has been investigated by angle-resolved...
Applying in-situ combination of angle-resolved photoemission and inverse photoemission spectroscopy ...
The unoccupied electronic band structure of the Ge(001)2 × 1 surface along the \̄gGJ̄J̄' line of the...
The valence band structure of the (2×1) reconstructed surface of ZnSe{001} has been investigated usi...
The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by...
The surface band gap of the Ge(111)c(2×8) surface at low temperature is determined on the basis of s...
Clean and metal-adsorbed (100) surfaces of group-IV semiconductors, such as Si and Ge, often exhibit...
The electronic structure of H/Ge(111)1×1 was investigated using angle-resolved photoelectron spectro...
The 3d surface core-level shifts of the clean Ge(100)(2 71) surface have been investigated at 300 K ...
This paper describes a study concerning the interaction of oxygen with clean Ge(001)2 × 1 surfaces i...
AbstractThe valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe ...
We present the result of a combined ab initio theoretical study and ultraviolet photoemission spectr...
Abstract. The electronic structure of a Na/Ge(111)–3 1 surface was investigated by valence-band and...
The experimental study of the bonding geometry of a (100)Ge surface exposed to H₂S in the gas phase ...
We have investigated the close packed 3 root 3 x 3 root 3R30 degrees-C-60 monolayer on the Ge(111) s...
The surface electronic structure of the Mg (10 1̄ 0) surface has been investigated by angle-resolved...