Interference effects in Bragg-case synchrotron section topography of elastically bent silicon implanted crystals

White-beam synchrotron section topography was applied to a silicon crystal implanted with 4.8 MeV α-particles elastically bent with the radius of curvature close to 100 m. A number of section patterns corresponding to different reflections was analysed. It was found that the section pattern in the bent sample was drastically different from those observed in a flat sample. The difference consists in the occurrence of the sets of additional interference fringes covering a long distance up to several millimetres behind the main diffraction maximum. It was possible to reproduce some characteristic features of the fringes both in the implanted and non-implanted region by numerical integration of the Takagi-Taupin equation