Lattice Deformation Studies in Silicon Implanted with High-Energy Protons

The deformation of crystal lattice in silicon implanted with protons ofenergy 1.6-9 MeV was studied by means of X-ray topography and double--crystal rocking curve measurements. The samples were investigated as-im-planted and after thermal and electron annealing. The surface relief of theimplanted part of the crystal was also revealed with optical methods. As-im-planted wafers exhibited spherical bending being convex at the implantedside. Thermal and electron annealing caused a dramatic increase in bend-ing of the implanted part while the bending of the remaining part of thesample was reduced. A characteristic behaviour of a double-crystal topo-graphic contrast in the annealed crystals was explained due to bending ofthe shot-through layer along the Gaussian profile