The internal structure of p− and p+ doped porous silicon (PS) has been investigated by small-angle X-ray scattering (SAXS) and grazing incidence diffraction (GID) using synchrotron radiation. The silicon morphology in p− doped samples shows a bimodal distribution of small (some nm) and larger (some 10 nm) particle sizes for all porosities investigated. The diameter of the small particles decreases with increasing porosity, which is accompanied by a blue shift of the luminescence as predicted by theory. In p+ doped PS we found predominantly large cylindrically shaped particles, oriented perpendicular to the surface, forming a perfect lattice with holes. These particles are arranged with preferred lateral distances with a correlation length i...
Various explanations have been proposed for the strong visible luminescence from porous silicon (PS...
Abstract. Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystall...
Porous silicon (PS) layers come into existance as a result of electrochemical anodization on silic...
The internal structure of p− and p+ doped porous silicon (PS) has been investigated by small-angle X...
The structure of free-standing films of p-doped porous silicon with different porosities has been in...
Small-Angle X-ray Scattering is well suited to the study of porous silicon microstructure since the ...
The authors have shown in their previous studies that applications of x-ray scattering techniques in...
This paper presents an experimental investigation of the local structure of porous silicon based on ...
The incipient formation of porous silicon at the solution/silicon interface was examined in situ usi...
The local structure of porous silicon has been studied exciting its optical luminescence by X-rays (...
International audienceHigh resolution x-ray diffraction has been used to study the effect of doping ...
The single crystal property of p+ type porous silicon is used to investigate the formation mechanism...
X-ray absorption fine structure (XAFS) at the Si K edge in porous silicon has been measured by monit...
X-ray absorption spectroscopy (XAS) at the Si-K absorption edge has been applied to study the influe...
We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. ...
Various explanations have been proposed for the strong visible luminescence from porous silicon (PS...
Abstract. Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystall...
Porous silicon (PS) layers come into existance as a result of electrochemical anodization on silic...
The internal structure of p− and p+ doped porous silicon (PS) has been investigated by small-angle X...
The structure of free-standing films of p-doped porous silicon with different porosities has been in...
Small-Angle X-ray Scattering is well suited to the study of porous silicon microstructure since the ...
The authors have shown in their previous studies that applications of x-ray scattering techniques in...
This paper presents an experimental investigation of the local structure of porous silicon based on ...
The incipient formation of porous silicon at the solution/silicon interface was examined in situ usi...
The local structure of porous silicon has been studied exciting its optical luminescence by X-rays (...
International audienceHigh resolution x-ray diffraction has been used to study the effect of doping ...
The single crystal property of p+ type porous silicon is used to investigate the formation mechanism...
X-ray absorption fine structure (XAFS) at the Si K edge in porous silicon has been measured by monit...
X-ray absorption spectroscopy (XAS) at the Si-K absorption edge has been applied to study the influe...
We have studied the dependence of porous silicon morphology and porosity on fabrication conditions. ...
Various explanations have been proposed for the strong visible luminescence from porous silicon (PS...
Abstract. Raman scattering and photoluminescence (PL) measurements on (100) oriented n-type crystall...
Porous silicon (PS) layers come into existance as a result of electrochemical anodization on silic...