The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicability as beam loss monitors for the HERA p-ring. The results indicate that photodiodes can withstand doses of 5×10$^3$ Gy without any problems, except a small increase of dark currents. Therefore, these diodes could be used as loss monitors in HERA for several years
Two kinds of photodiodes have been investigated for the ATLAS SCT readout. We present in this paper ...
This paper presents a summary of the main results we observed after several years of study on irradi...
A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by approximately 1 MeV neutr...
The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicabilit...
The silicon detectors used in the H1-PLUG calorimeter have shown increasing aging effects during the...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
Silicon PIN photodiodes were fabricated with 250 nm SiO2 antireflective coating (ARC). The changes i...
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized a...
International audienceIn this paper, the displacement damage dose effects in PiN photodiodes is inve...
In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be used in the A...
The radiation hardness of a fully depleted Pinned Photodiode (PPD) CMOS image sensor (CIS) has been ...
The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The S...
We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positivel...
International audienceThis paper investigates the effects of displacement damage in Pinned Photodiod...
[[abstract]]In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be u...
Two kinds of photodiodes have been investigated for the ATLAS SCT readout. We present in this paper ...
This paper presents a summary of the main results we observed after several years of study on irradi...
A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by approximately 1 MeV neutr...
The investigations of radiation damages to Si-PIN-photodiodes are done in view of their applicabilit...
The silicon detectors used in the H1-PLUG calorimeter have shown increasing aging effects during the...
International audienceSeveral Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufac...
Silicon PIN photodiodes were fabricated with 250 nm SiO2 antireflective coating (ARC). The changes i...
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized a...
International audienceIn this paper, the displacement damage dose effects in PiN photodiodes is inve...
In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be used in the A...
The radiation hardness of a fully depleted Pinned Photodiode (PPD) CMOS image sensor (CIS) has been ...
The highly sensitive silicon PIN photodiodes were fabricated to use in radiation environments. The S...
We report on the radiation damage to silicon detectors at 25°C and 10°C induced by 190 MeV positivel...
International audienceThis paper investigates the effects of displacement damage in Pinned Photodiod...
[[abstract]]In previous research, epitaxial Si PIN photodiodes produced by Centronic which will be u...
Two kinds of photodiodes have been investigated for the ATLAS SCT readout. We present in this paper ...
This paper presents a summary of the main results we observed after several years of study on irradi...
A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by approximately 1 MeV neutr...
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