We report on interfacial contributions to the anisotropic magnetoresistance (AMR) in Co layers sandwichedbetween Pt. Utilizing the Fuchs-Sondheimer formalism interface contributions can be separated from bulklikeAMR. We demonstrate that for all-metal systems interfacial AMR is also present when varying the magnetizationwithin the film plane. This interfacial in-plane AMR is two times smaller than the contribution that arises whenthe magnetization is varied within the plane perpendicular to the current direction. This finding is in contrast tothe spin Hall MR found for ferromagnetic insulator/Pt bilayers revealing the existence of different MR effects atthe interfaces of Pt with conducting and insulating ferromagnets
Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a...
We report a combined theoretical and experimental investigation of magnetic proximity and Hall trans...
Spin Transfer Torque (STT) is of great interest in data writing scheme for the Magneto-resistive Ran...
We report on interfacial contributions to the anisotropic magnetoresistance (AMR) in Co layers sandw...
We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having ...
We report on the magnetoresistance of textured films consisting of 3d-ferromagnetic layers sandwiche...
Recent studies evidenced the emergence of asymmetric electron transport in layered conductors owing ...
We report the magnetoresistance of Co/Pt superlattices having thickness gradients at different orien...
The recently discovered spin Hall magnetoresistance (SMR) effect is a useful means to obtain informa...
We have studied in-plane anisotropic magnetoresistance(AMR) in cobaltfilms with overlayers having de...
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very g...
All conducting materials have a magnetoresistive response (MR). In bulk ferromagnets the MR is due t...
International audienceWe measure the spin-charge interconversion by the spin Hall effect in various ...
The magnetoresistance (MR) of Co film and Co/Pt bilayers was studied systematically as a function of...
The magnetoresistance (MR) of the sandwich CoZr/Cu/Co at 300K has been investigated. The MR beh...
Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a...
We report a combined theoretical and experimental investigation of magnetic proximity and Hall trans...
Spin Transfer Torque (STT) is of great interest in data writing scheme for the Magneto-resistive Ran...
We report on interfacial contributions to the anisotropic magnetoresistance (AMR) in Co layers sandw...
We have studied in-plane anisotropic magnetoresistance (AMR) in cobalt films with overlayers having ...
We report on the magnetoresistance of textured films consisting of 3d-ferromagnetic layers sandwiche...
Recent studies evidenced the emergence of asymmetric electron transport in layered conductors owing ...
We report the magnetoresistance of Co/Pt superlattices having thickness gradients at different orien...
The recently discovered spin Hall magnetoresistance (SMR) effect is a useful means to obtain informa...
We have studied in-plane anisotropic magnetoresistance(AMR) in cobaltfilms with overlayers having de...
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very g...
All conducting materials have a magnetoresistive response (MR). In bulk ferromagnets the MR is due t...
International audienceWe measure the spin-charge interconversion by the spin Hall effect in various ...
The magnetoresistance (MR) of Co film and Co/Pt bilayers was studied systematically as a function of...
The magnetoresistance (MR) of the sandwich CoZr/Cu/Co at 300K has been investigated. The MR beh...
Pure spin currents have potential for use in energy-friendly spintronics. They can be generated by a...
We report a combined theoretical and experimental investigation of magnetic proximity and Hall trans...
Spin Transfer Torque (STT) is of great interest in data writing scheme for the Magneto-resistive Ran...