Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires

In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets.Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program