Carrier dynamics of a 1.3 mu m InAs/GaAs quantum dot amplifier is studied using heterodyne pump-probe spectroscopy. Measurements of the recovery times versus injection current reveal a power law behavior predicted by a quantum dot rate equation model. These results indicate that Auger processes dominate the carrier dynamics. (c) 2007 American Institute of Physics
We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into a...
The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier...
Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs/GaAs...
Carrier dynamics of a 1.3μm InAs∕GaAs quantum dot amplifier is studied using heterodyne pump-probe s...
Carrier dynamics of a 1.3 mu m InAs/GaAs quantum dot amplifier is studied using heterodyne pump-prob...
Carrier dynamics of a 1.3 mu m InAs/GaAs quantum dot amplifier is studied using heterodyne pump-prob...
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs...
Abstract—We assess the influence of the degree of quantum con-finement on the carrier recovery times...
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied u...
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied u...
We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into a...
We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into a...
The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier...
Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs/GaAs...
Carrier dynamics of a 1.3μm InAs∕GaAs quantum dot amplifier is studied using heterodyne pump-probe s...
Carrier dynamics of a 1.3 mu m InAs/GaAs quantum dot amplifier is studied using heterodyne pump-prob...
Carrier dynamics of a 1.3 mu m InAs/GaAs quantum dot amplifier is studied using heterodyne pump-prob...
The gain and phase dynamics of InAs∕GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs...
The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-col...
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs...
Abstract—We assess the influence of the degree of quantum con-finement on the carrier recovery times...
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied u...
The carrier relaxation and escape dynamics of InAs/GaAs quantum dot waveguide absorbers is studied u...
We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into a...
We consider a rate equation model of a quantum dot semiconductor optical amplifier that takes into a...
The refractive index dynamics of an InAs/InGaAs/GaAs dots-in-a-well semiconductor optical amplifier...
Ultrafast gain dynamics of the ground-state transition are measured in electrically pumped InAs/GaAs...